Cree announces issuance of patent on pendeoepitaxy process

August 8, 2001 – Durham, NC – Cree Inc. has been issued US patent no. 6,265,289 entitled “Methods of Fabricating Gallium Nitride (GaN) semiconductor Layers by Lateral Growth from Sidewalls into Trenches, and Gallium Nitride Semiconductor Structures Fabricated Thereby.”

The patent, licensed exclusively to Cree by North Carolina State U., covers process technology known as pendeoepitaxy, or “pendeo” for short, which refers to a process for growing gallium nitride semiconductor layers with low defect densities.

Chuck Swoboda, Cree’s President and CEO stated, “The issuance of this patent extends Cree’s portfolio of technology critical in the development of GaN-based devices. Growing low defect layers of GaN is essential to the realization of long-lifetime GaN-based laser diodes and other devices”

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <s> <strike> <strong>

LIVE NEWS FEED

NEW PRODUCTS

Pfeiffer Vacuum introduces HiPace 2800 turbopump for ion implantation applications
07/06/2016Pfeiffer Vacuum has introduced the HiPace 2800 IT turbopump that is designed for ion implantation applications....
NanoFocus AG introduces new inspection system for semiconductors industry
05/31/2016NanoFocus AG, the developer and manufacturer of optical 3D surface measuring technology, introduces the new measuring system µ...
Edwards launches new vacuum pumps at SEMICON China 2016
03/15/2016Edwards announced the availability of two new vacuum pump product families at SEMICON China: the iXM Series for semiconductor etch and chemical v...