RF Micro begins production in second GaAs HBT fab Jan. 3, 2002 – Greensboro, NC – RF Micro Devices, a provider of radio frequency integrated circuits (RFICs) for wireless communications applications, has begun production in its second gallium arsenide heterojunction bipolar transistor (GaAs HBT) fab at the company’s headquarters. The new fab is equipped to produce up to approximately 25,000 to 40,000 wafers/year. When the second fab is fully equipped and operating at full capacity it is expected to be capable of producing the equivalent of approximately 210,000 4-inch wafers/year, bringing the projected capacity of the company’s two GaAs HBT fabs to the equivalent of approximately 270,000 4-inch wafers/year. The production schedule for the second fab is programmable, and RF Micro Devices plans to continue equipping the second fab consistent with demand. “The new fab has not only contributed to the addition of new customers, it has also been instrumental in the development of recent strategic relationships that represent incremental revenue opportunities for the company,” said Jerry Neal, executive VP of sales, marketing and strategic development of RF Micro Devices.