Samsung develops new process integration technology for high-k dielectric films

June 12, 2002 – San Jose, CA – Samsung Semiconductor Inc. unveiled its first successful development of a next-generation wafer processing technology in which a hafnium dioxide-aluminum oxide laminate film is fabricated on the silicon wafer using Atomic Layer Deposition.

This high-k dielectric process is key for manufacturers wishing to obtain smaller circuit-geometries, Samsung said. Moreover, the new process technology advances the introduction of nanometer technology, as it offers a practical solution that can be applied to existing facilities without significant capital investment.

The use of high-k dielectric materials reduces the equivalent oxide thickness (EOT) without compromising the leakage current factor, the company said. Samsung’s hafnium dioxide-aluminum oxide laminate film satisfies the EOT requirement for both memory and SoC devices.


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