Intel, Corning enter JDA for EUV photomask substrates

July 7, 2005 – Intel Corp. and Corning Inc. have entered into a joint development agreement (JDA) to develop ultra-low thermal expansion (ULE) glass photomask substrates required for extreme ultraviolet (EUV) lithography technology. The JDA will help to enable chip production using EUV technology starting in 2009.

These substrates are needed to develop low defect EUV photomasks to enable 32nm node high-volume production using EUV lithography.

“The cooperative efforts of Corning and Intel will provide the opportunity to develop ULE glass substrates and position them as the material of choice for EUV photomasks,” said Jim Steiner, senior VP and GM, Corning Specialty Materials.

“Driving down EUV photomask defect levels is a critical issue for the commercialization of EUV technology. Corning and Intel plan to address the mask substrate contribution to this issue,” said Janice Golda, Intel’s director of lithography.

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