TDI releases semi-insulating substrates for AlGaN/GaN HEMTs

August 16, 2005 – Technologies and Devices International Inc. (TDI) has announced the availability of novel 3-in. dia. semi insulating substrate materials for nitride-based semiconductor devices. The group-III nitride compound semiconductor material family includes gallium nitride (GaN), aluminum nitride (AlN), and their alloys. The GaN-based market is projected at least $5B for 2007 and more than $7B for 2009.

The product consists of 10-18 micron thick single crystal AlN film deposited on a conductive silicon carbide (SiC) substrate. The product is targeted for substrate applications for ultra high power AlGaN/GaN high electron mobility transistors (HEMTs). Other target applications include high power blue and ultra violet (UV) light emitters, light emitting diodes (LEDs) and laser diodes (LDs).

“Substrate related issues in nitride electronics are well known. Due to lack of native AlN and GaN substrates, nitride devices are fabricated on foreign substrates, which are not lattice and thermally matched to the device structures, limiting their performance, reliability, and causing device degradation. Proprietary stress-control technology developed at TDI allows us to put in production these new substrate materials, which will allow the nitride community to speed up development and commercialization of advanced nitride semiconductor devices,” stated Vladimir Dmitriev, president and CEO of TDI.

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