High-k Technology Shrinks Transistor Size

(January 29, 2007) YORKTOWN HEIGHTS, NY &#151 IBM announced it is in the development stage with 45-nm transistor technology that uses high-k gate dielectric and a proprietary metal composite for the transistor gate electrode. Constructing the transistor with conventional methods such as high-temperature annealing &#151 instead of removing and recreating the gate post-build &#151 is a familiar process that gives engineers more control and reduces the possibility of error, said Ghavam Shahidi, director of silicon technology at IBM.

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <s> <strike> <strong>

LIVE NEWS FEED

NEW PRODUCTS

Astronics Test Systems announces new PXIe test instruments
01/24/2017Astronics Corporation, through its wholly-owned subsidiary Astronics Test Systems, introduced two new test instruments today. ...
Edwards launches new Smart Thermal Management System at SEMICON Europa 2016
10/25/2016Smart TMS helps semiconductor, flat panel display and solar manufacturers improve their process performance and safety by red...
Tektronix introduces Keithley S540 power semiconductor test system
10/19/2016Tektronix, Inc., a worldwide provider of measurement solutions, today introduced the Keithley S540 Power Semiconductor Test System, a ...