(January 29, 2007) YORKTOWN HEIGHTS, NY IBM announced it is in the development stage with 45-nm transistor technology that uses high-k gate dielectric and a proprietary metal composite for the transistor gate electrode. Constructing the transistor with conventional methods such as high-temperature annealing instead of removing and recreating the gate post-build is a familiar process that gives engineers more control and reduces the possibility of error, said Ghavam Shahidi, director of silicon technology at IBM.
POST A COMMENT
Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.