InGaN substrates are grown by proprietary hydride vapor phase epitaxy (HVPE) processes, on TDI designed and built equipment. The proprietary manufacturing process builds in InGaN layer through deposition onto 2" GaN/sapphire templates. InN content ranges from 5 to 20 mol. %, and deposition rate, doping levels, composition range, and density are adjusted to meet customer parameters. TDI plans to scale the process to 6" and larger wafers in high-throughput volume production.
(August 20, 2007) FLEMINGTON, NJ — DEK introduced a regional-content feature to its website, enabling visitors to view product, process, and company information in local languages and tailored to the production parameters of a region. Users select Asia, Europe, or U.S. content when entering the site.