NIL Technology’s new nanoimprint stamp targets photonic device development

April 23, 2008 — NIL Technology has added what it calls a “high-accuracy but low-cost photonic stamp in silicon” to the company’s product line incorporating photonic crystal structures. The stamps are designed to help create future photonic devices.

Photonic crystals will comprise the building blocks for next-generation photonic devices, says NIL Technology. The new photonic stamp is an attempt to contribute to these further developments within devices based on especially active optical components and integrated optics as high brightness LEDs and solid state lighting, besides bio-medical applications employing photonic crystal structures.

The new photonic stamp features pillar arrays with structure sizes from 125-275nm and pitches ranging from 200-500nm in silicon. The stamp boasts a very large imprinting (active) area of 4 cm2 making it ideal for pre-production. Based on a fabrication technique using electron beam lithography (EBL), the stamps will be sold at EUR 9900. Anti-sticking coating and dicing of the stamps are optional extra features.

“This new stamp is our latest response to the increasing inquiries we get from R&D institutions and companies working within the scientific area of display, lighting and optics. We definitely see an upward going trend and feel compelled to contribute with high quality stamps at a low cost facilitating the efforts of our customers in their pursuit of realizing pioneering end-products enabled by nanoimprint lithography,” says company CEO Theodor Nielsen.

The announcement follows NIL Technology’s introduction just a few months ago of new standard stamps for affordable nanoimprint lithography.

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