3D STEM Tomography Based Failure Analysis of 45 nm CMOS Devices

Shrinking dimensions in new semiconductor process nodes make it harder to isolate and analyze certain classes of defects using the common “slice and view” method based on Focused Ion Beam (FIB) milling and Scanning Electron Microscopy (SEM). This paper presents an original sample preparation method that helps semiconductor labs use three-dimensional Scanning Transmission Electron Microscopy (3D STEM) tomography instead. This approach leads to analysis with nanometer (nm) resolution of a sample volume large enough to contain an entire defect. Download the paper to learn the method and review successful results in three different case studies using 45-nm structures.



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