3D STEM Tomography Based Failure Analysis of 45 nm CMOS Devices

Shrinking dimensions in new semiconductor process nodes make it harder to isolate and analyze certain classes of defects using the common “slice and view” method based on Focused Ion Beam (FIB) milling and Scanning Electron Microscopy (SEM). This paper presents an original sample preparation method that helps semiconductor labs use three-dimensional Scanning Transmission Electron Microscopy (3D STEM) tomography instead. This approach leads to analysis with nanometer (nm) resolution of a sample volume large enough to contain an entire defect. Download the paper to learn the method and review successful results in three different case studies using 45-nm structures.

Format: RES
Size: 0.00

To view this White Paper, please log in or register


* Denotes required fields
* Email Address
* Your Password
* Re-Type Your Password
* First Name * Last Name
* Job Title * Company
* Address
Address 2
* City *State/Province
* ZIP Postal Code
* Country
* Phone

Please re-type the text shown below to complete your registration:

By clicking "Submit", you are indicating that you have read and agree with our Terms & Conditions and Privacy Policy.



Edwards launches new Smart Thermal Management System at SEMICON Europa 2016
10/25/2016Smart TMS helps semiconductor, flat panel display and solar manufacturers improve their process performance and safety by red...
Tektronix introduces Keithley S540 power semiconductor test system
10/19/2016Tektronix, Inc., a worldwide provider of measurement solutions, today introduced the Keithley S540 Power Semiconductor Test System, a ...
Novel Wafer Analyzer for up to 300mm wafer using high speed Raman Imaging Technology
08/08/2016Nanophoton introduces RAMANdrive - a new Wafer Analyzer - for a wide range of applications at semiconductor market a...