3D STEM Tomography Based Failure Analysis of 45 nm CMOS Devices

Shrinking dimensions in new semiconductor process nodes make it harder to isolate and analyze certain classes of defects using the common “slice and view” method based on Focused Ion Beam (FIB) milling and Scanning Electron Microscopy (SEM). This paper presents an original sample preparation method that helps semiconductor labs use three-dimensional Scanning Transmission Electron Microscopy (3D STEM) tomography instead. This approach leads to analysis with nanometer (nm) resolution of a sample volume large enough to contain an entire defect. Download the paper to learn the method and review successful results in three different case studies using 45-nm structures.



Format: RES
Size: 0.00



To view this White Paper, please log in or register




Register



* Denotes required fields
* Email Address
* Your Password
* Re-Type Your Password
* First Name * Last Name
* Job Title * Company
* Address
Address 2
* City *State/Province
* ZIP Postal Code
* Country
* Phone


Please re-type the text shown below to complete your registration:



By clicking "Submit", you are indicating that you have read and agree with our Terms & Conditions and Privacy Policy.

LIVE NEWS FEED

NEW PRODUCTS

Compact point of use fluid delivery heater replaces multiple components in a system
07/22/2015Watlow, a designer and manufacturer of complete thermal systems, announces its new point-of-use fluid delivery heater...
New fiber optic temperature sensing and control system ideal for RF environments
07/22/2015Watlow, a designer and manufacturer of complete thermal systems, announced its new EZ-ZONE RM fiber optic temperature me...