September 17, 2009 – Carl Zeiss says it has delivered "a complete optical system for production-ready EUV" in an ASML tool. The entire completed system with projected 60 wafers/hour throughput is expected in 2H10 targeting 20nm node manufacturing.
ASML currently has development EUV lithography tools at IMEC and Albany, NY, and claims to have received five orders for the production system. "EUVL is making excellent progress as a cost-effective single patterning technology [with] the resolution power to carry Moore’s law beyond the next decade," according to Christian Wagner, senior product manager at ASML, in a statement.
Zeiss says it has poured more than €100M into EUV lithography R&D, plus >€20M from German and European officials. The company also pointed to recent EUV advancements at IMEC (production of 22nm SRAMs with 44% smaller chip surface area), and Cymer’s delivery this summer of the first laser-produced plasma (LPP) EUV source; at the time Cymer said it could achieve 75W power at full die exposure, with 100W expected achievable within the quarter.