Samsung: R&D moving to 32/28nm foundry process

November 10, 2009 – Samsung Electronics says it has begun focusing its R&D on advanced logic process development for its foundry business, leveraging synergies with its memory development (e.g., high-k, 3D transistors and through-silicon vias [TSV], and next-gen lithography including EUV) and complementing other consortiums and joint development activities (e.g. IBM’s Technology Alliance and partnerships with IMEC and SEMATECH). Samsung already offers foundry services for 45nm volume production, and is in "preparation" for 32nm/28nm node and beyond, tied to the IBM alliance technology.

"Significantly" increasing the resources put toward foundry logic process technology and advanced nodes will allow the company to both build and grow the business, while leveraging its know-how on the memory side, according to Stephen Woo, EVP/GM of Samsung Electronics’ system LSI division, in a statement.

"There is critical R&D work to be done at the most advanced process nodes with regards to minimizing power consumption while incorporating a feature rich menu of devices for designers to create innovative next-generation mobile and high performance SoC devices," added Kinam Kim, EVP/GM of Samsung’ semiconductor R&D center. "Samsung is addressing this and other design needs head-on by increasing our focus on logic process advancements while taking advantage of know-how gained in memory."

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