Gate-first says Globalfoundries

(November 29, 2010) — Nick Kepler, VP, program management at Globalfoundries and a presenter at the IEEE Bay Area Nanotechnology Council’s Half-day Symposium (11/16/10, Santa Clara, CA) described the company’s rationale for selecting the gate-first approach to HK+MG processing.

Listen to Kepler’s interview: Download (iPod/iPhone users) or Play Now

Kepler said that the gate-first approach enables the overall Vt tuning range – it’s well over 300mV — and the company has not experienced Vt pinning issues. He also noted that process knobs can be used to tune Vt to meet product requirements. Kepler also said that gate-first offers repeatable LVT and SLVT options.

Click to Enlarge

Two primary considerations that Globalfoundries had with respect to selecting gate-first is that at 28nm, gate-first provides true scaling relative to 40nm. He noted that there is an up to 50% increase in speed and a 50% reduction in energy/switch. An additional benefit of gate-first is that it sustains 40nm layout style advantages (e.g., bi-directional poly, poly jogs, large capacitors). There is also 10-20% smaller die relative to 28nm using a gate-last approach. Kepler’s observations were in direct contrast to TSMC’s Di Ma, who explains here why TSMC chose gate-last approach.

Click to Enlarge

Kepler told Debra Vogler, senior technical editor, that Globalfoundries will harness three key enablers of technology scaling: lithography, materials (new materials and their integration), and 3D packaging. Kepler said that Globalfoundries will bring EUV into production at the 20nm node. He notes that, initially, EUV is not an enabler of 20nm, which can be accomplished with immersion lithography, but the company views EUV lithography as a cost-reducing agent at 20nm. And using EUVL at 20nm will allow the company to get practice with the technology in advance of when it will truly be needed: below 20nm. 

Also read: IEDM 2009: HKMG gate-first vs gate-last options

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <s> <strike> <strong>

NEW PRODUCTS

Edwards launches new vacuum pumps at SEMICON China 2016
03/15/2016Edwards announced the availability of two new vacuum pump product families at SEMICON China: the iXM Series for semiconductor etch and chemical v...
Low-outgassing Faraday Isolators to improve lifetime and reliability of optical systems
02/18/2016Qioptiq, an Excelitas Technologies company introduces the LINOS Low-outgassing Faraday Isolators, the first of th...
Versatile high throughput SEM from JEOL
11/04/2015JEOL's new JSM-IT100 is the latest addition to its InTouchScope Series of Scanning Electron Microscopes....