Metrology tool debuts for B-SiGe HKMG from CAMECA

January 27, 2011CAMECA unveiled the latest addition to its line of high-end metrology systems: the EX-300 metrology tool targeted for front-end process control of 22nm technology nodes and beyond.

Click to EnlargeThe EX-300 is a versatile metrology tool based on LEXES (Low-energy Electron induced X-ray Emission Spectrometry) technology, notes Dr. Michel Schuhmacher, CAMECA VP and CTO. The tool suits semiconductor fabs integrating new challenging processes, adds Dr. Schuhmacher, offering capabilities for front-end compositional control at and near the surface. The instrument targets front-end process control for 22nm technology nodes and performs metrology of patterned wafers down to 30 × 30µm.

LEXES is a surface probing technique pioneered by CAMECA.  The technology is now well-established for addressing challenges in elemental composition, thickness determination and dopant dosimetry.

CAMECA optimized the performance of the EX-300 for challenging high-k metal gate (HKMG), epitaxial layers such as boron in silicon germanium (B:SiGe) and shallow implants, fulfilling requirements of both rapid device development and high-yield mass production. In addition, the instrument is designed to deliver enhanced long-term stability and minimize mean time to repair (MTTR).

CAMECA designs, manufactures and services scientific instruments for material micro- and nano-analysis. CAMECA is now a unit of AMETEK’s Materials Analysis Division.  Learn more at http://www.cameca.com

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