April 4, 2011 – BUSINESS WIRE — Thin Film Electronics ASA (Thinfilm) and PARC, a Xerox company, entered the next phase of their co-innovation engagement for printed memory devices. This next phase extends the engagement to prototyping the product for manufacturing readiness.
PARC and Thinfilm’s collaboration on next-generation printed memory solutions kicked off last year with joint design of Thinfilm 128-bit Addressable Memory, which combines Thinfilm’s non-volatile memory (NVM) technology with PARC’s printed CMOS transistor technology.
Thinfilm will use the PARC CMOS technology to expand the memory technology that it has previously commercialized in a roll-to-roll (R2R) printed production process to an addressable version that is still fully printed. Products with Thinfilm addressable memory will be a key avenue for PARC to commercialize its technology.
"Our mutual goal is to reach the printed addressable memory prototype by the end of this year. Key work is already being done at PARC, working closely with Thinfilm’s engineers," said Dr. Ross Bringans, VP of PARC’s Electronic Materials and Devices research. "Thinfilm will utilize PARC background IP for the printed memory application."
"We expect to transfer the contact-based 128-bit memory array to production in 2012. This addressable memory meets the need for creating ubiquitous low-cost tags and disposable printed systems," Davor Sutija, Thinfilm CEO said.
Such memory enables unique form factors, cost advantages, and integration with other printed components including sensors and simple displays that can be customized for multiple markets — ranging from games and toys, to ID tags, disposable sensors, and price labels, notes Ana Arias, co-head of Thinfilm’s Technology Council, U.C. Berkeley Associate Professor in EECS.
To learn more about Thinfilm, please see www.thinfilm.no.
To learn more about PARC, please see: www.parc.com.