IEDM 2011: Improve HKMG reliability with better SILC

 

SEMATECH researchers will reveal a reliability study for high-k/metal gate (HKMG) nMOSFETs with several mitigating process changes, examining several key factors impacting stress-induced leakage current (SILC). Both a high-k bulk layer and interfacial layer contribute to SILC characteristics, they say, and they propose a way to reduce SILC and improve device lifetimes. [Paper #18.3 Improved High-k/Metal Gate Lifetime Via Improved SILC Understanding and Mitigation"]

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