IEDM 2011: Three 5nm FETs battle in ultimate device scaling

 

Current efforts to maintain Moore’s Law via scaling are expected to take the industry down into the teens of gate lengths, but there’s a lot of debate what happens next with new architectures and exotic materials/processes. Purdue researchers look at three different device designs to survey the playing field at 10nm: carbon nanotubes, graphene nanoribbons, and III-V and silicon ultra-thin-body devices and nanowires. Among their findings: many of them can get good subthreshold swing down to 8nm; nonplanar devices can get good performance even down to 5nm gate lengths; and with identical bandgaps, CNT FETs and small-diameter silicon and III-V nanowires exhibit roughly the same performance, though profile and interband tunneling are critically important. [Paper #11.2, "Ultimate Device Scaling: Intrinsic Performance Comparisons of Carbon-Based, InGaAs and Si Field-Effect Transistors for 5-nm Gate Length"]

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