Improved post-etch metal and oxide residue removal yields

November 3, 2011 — Authors from Avantor Performance Materials and SSMC Inc. compare the use of a semi-aqueous post-etch ash residue remover with an industry-standard hydroxyl-amine (HA)-based residue removal chemistry. The semi-aqueous-based product was shown to reduce cost of ownership for manufacturing of low- and high-voltage logic devices. The use of this newer generation engineered product was also shown to increase yield when used to replace the existing residue removal chemistry in fabrication of 45nm logic devices.

SSMC decided to test BAKER ALEG-380 from Avantor Performance Materials, Inc. (formerly Mallinckrodt Baker, Inc.) to assess whether changing the process of record (POR) chemistry for post-etch metal and oxide residue removal could be accomplished without impacting yield, device quality, and with the desired cost savings.

The product being tested (BAKER ALEG-380) is an engineered blend of organic solvents and semi-aqueous components suitable for bulk photoresist removal and post-etch ash residue and sidewall polymer removal. Designed to provide broad latitude in terms of processing times and temperatures, it is 100% water soluble and contains no HA or fluoride elements.

Initial tests demonstrated improved yield

One of the significant process challenges associated with using HA-based post-etch residue removal products is the chemistry

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