JEDEC publishes wide-I/O mobile DRAM standard

January 5, 2012 — Standards org JEDEC Solid State Technology Association released a new standard for wide I/O mobile DRAM: JESD229 Wide I/O Single Data Rate (SDR). Wide I/O mobile DRAM increases die integration — stacking chips with through silicon via (TSV) interconnects with a system on chip (SoC) — and improves bandwidth, latency, power, weight and form factor.

The standard defines features, functionalities, AC and DC characteristics, and ball/signal assignments. It is particularly well-suited for applications requiring extreme power efficiency and increased memory bandwidth (up to 17GBps). Wide I/O offers twice the bandwidth of the previous generation standard, LPDDR2, at the same rate of power consumption.

Also read: IPC, JEDEC devise package strain test and JEDEC releases serial NOR Flash standard

Mobile wide-I/O DRAM are used in smartphones, tablets, handheld gaming consoles and other mobile devices. Sophie Dumas, Chairman of the JC-42.6 Subcommittee for Low Power Memories, notes that the high-resolution displays, high-quality graphics, and multi-tasking capabilities of next-gen devices require technologies like wide-I/O mobile DRAM.

JESD229 may be downloaded free of charge from the JEDEC website at

JEDEC develops standards for the microelectronics industry. All JEDEC standards are available online, at no charge. For more information, visit

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