GTAT wins 6″ sapphire ingot order from LED substrate maker

February 10, 2012 – BUSINESS WIRE — GT Advanced Technologies Inc. (NASDAQ: GTAT) subsidiary, GT Crystal Systems, will supply 500,000 2" equivalent (TIE) 6" C-plane sapphire cores to Chongqing Silian Optoelectronics Science & Technology Co. Ltd. (Silian). Silian produces high-quality sapphire substrates for high-brightness light-emitting diode (HB-LED) manufacturing.

Large-diameter sapphire wafers enable higher yields in the LED industry, noted David Reid, COO and GM, Silian.

The sapphire ingots will be produced from boules grown in GT’s ASF sapphire growth furnaces installed in the company’s newly expanded sapphire manufacturing facility in Salem, MA. Silian is a standing customer of GT Crystal Systems, and Reid noted the "consistency and quality of ASF-grown sapphire."

GT Advanced Technologies Inc. provides polysilicon production technology, and sapphire and silicon crystalline growth systems and materials for the solar, LED and other specialty markets. For additional information please visit www.gtat.com.

Also read: Rubicon re-ups sapphire wafer contract with largest customer

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