March 20, 2012 — Applied Materials Inc. (NASDAQ:AMAT) debuted a plasma-enhanced chemical vapor deposition (PECVD) film technology for display manufacturers targeting the high resolution needs of tablet devices and TVs.
The insulating silicon oxide (SiO2) films build metal oxide-based transistors for smaller, faster-switching pixels. The films provide a dielectric-layer interface for metal-oxide transistors that minimizes hydrogen impurities to improve transistor stability and optimize display performance.
They are tailored for deposition by AMAT’s AKT-PECVD systems, which boast high uniformity on glass panels up to 9m2. Uniformity and stability challenges have hampered metal-oxide transistor displays in the past, noted Tom Edman, group vice president and general manager of Applied’s AKT Display Business Group.
Major display manufacturers are requesting the products for upgrades and new system installations, Edman added.
Applied Materials is also developing indium gallium zinc oxide (IGZO) deposition and other advanced physical vapor deposition (PVD) processes for metal oxide manufacturing. AMAT’s rotary cathode array technology has been used to make highly uniform, homogeneous, low-defect active layers with higher thoughput and lower material consumption costs, Applied reports.
The metal-oxide, thin-film transistor (TFT) display manufacturing portfolio will be showcased at Applied Materials’ booth at FPD China 2012, March 20-22 in Shanghai.
Applied Materials Inc. (Nasdaq:AMAT) provides equipment, services and software to enable the manufacture of advanced semiconductor, flat panel display and solar photovoltaic products. Learn more at www.appliedmaterials.com.