May 11, 2012 – Marketwire — Bridgelux Inc., developer of light-emitting diodes (LEDs), and Toshiba Corporation, leading semiconductor manufacturer, reported a 1.1mm2 LED chip fabricated on an 8" gallium nitride on silicon (GaN-on-Si) wafer, emitting 614mW, <3.1V @ 350mA. This is the best-reported GaN-on-Si LED performance on an 8” wafer, according to the companies.
Silicon is a less expensive LED substrate than the traditional sapphire materials, and benefits from use in the established, high-volume semiconductor manufacturing industry. Bridgelux has a proprietary buffer layer technology that it claims creates results comprable to sapphire-based LEDs. In August 2011, Bridgelux reported a lumens/Watt (luminous efficiency) record for GaN-on-Si LEDs.
Bridgelux and Toshiba engaged in a joint collaborative agreement earlier this year for LED chips. Further development will target commercialization of the technology, noted Makoto Hideshima, EVP of Semiconductor and Storage Products Company, CPV of Toshiba.
Now, Toshiba is also making an equity investment in Bridgelux, to jointly pursue innovative solid state lighting (SSL) technology. Toshiba’s advanced silicon process and manufacturing technologies will be put to use on Bridgelux’s GaN-on-Si LED chip technology. In October last year, Bridgelux brought in $15 million in financing, following a $50 million Series D round.
The equity investment, coupled with Toshiba and Bridgelux’s development relationship, will help the companies “drive down the cost of solid-state solutions for the general lighting market," said Bill Watkins, Bridgelux CEO.
Bridgelux develops and manufactures solid-state lighting (SSL). For more information, please visit www.bridgelux.com.
Toshiba is a diversified manufacturer and marketer of advanced electronic and electrical products spanning digital consumer products; electronic devices and components; power systems, including nuclear energy; industrial and social infrastructure systems; and home appliances. Website: www.toshiba.co.jp/index.htm.