May 3, 2012 – Marketwire — GaN Systems Inc., provider of gallium nitride power switching semiconductors, and Arkansas Power Electronics International Inc. (APEI), developer of state-of-the-art technology for power electronics systems, electronic motor drives, and power electronics packaging, will co-develop a high-temperature, high-performance package optimized for gallium nitride (GaN) transistors and diodes.
The collaboration is funded in part by the Government of Canada through Sustainable Development Technology Canada (SDTC), with the goal of demonstrating the efficiency, performance, and reliability of gallium nitride power devices in a power converter for hybrid and electric vehicles (HEVs and EVs).
Next-generation power semiconductors are adopting GaN, and prospective users want to see the technology validated through real system design implementations, said Girvan Patterson, CEO of GaN Systems. GaN Systems uses a patented, island-based topology, an emerging gallium nitride device technology. "Advanced packaging…unlocks the vast potential of gallium nitride in high-power applications.