Heraeus Al-clad Cu bonding wire avoids metallization changes in power semiconductors

May 14, 2012 — Heraeus introduced its high-reliability composite aluminum/copper (CucorAl) semiconductor bonding wire, which offers strong mechanical and electrical bonds to semiconductor pads, with good thermal properties.

During passive temperature cycling and active power cycling tests, the Al-clad Cu bonding wire showed improved long-term reliability over Al bonding wires.

The aluminum coating is soft, structured around the copper core in a way that enables a reliable bonding window with existing chip metallizations and conventional wirebond tools. The thick wire is 60-70% copper by volume. It is available in 200-500

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <strike> <strong>

NEW PRODUCTS

Dynaloy unveils safer cleaners
11/19/2014In response to evolving industry trends and customer preferences for products with better environmental, health, and safety (EHS) profiles, Dynaloy LLC is launching three...
Entegris' VaporSorb filter line protects advanced yield production
10/21/2014Entegris, Inc. today announced a new product for its VaporSorb line of airborne molecular contamination (AMC) filters. ...
Next-generation nanoimprint lithography technology
10/21/2014EV Group (EVG) today introduced its SmartNIL large-area nanoimprint lithography (NIL) process....