Heraeus Al-clad Cu bonding wire avoids metallization changes in power semiconductors

May 14, 2012 — Heraeus introduced its high-reliability composite aluminum/copper (CucorAl) semiconductor bonding wire, which offers strong mechanical and electrical bonds to semiconductor pads, with good thermal properties.

During passive temperature cycling and active power cycling tests, the Al-clad Cu bonding wire showed improved long-term reliability over Al bonding wires.

The aluminum coating is soft, structured around the copper core in a way that enables a reliable bonding window with existing chip metallizations and conventional wirebond tools. The thick wire is 60-70% copper by volume. It is available in 200-500


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