Heraeus Al-clad Cu bonding wire avoids metallization changes in power semiconductors

May 14, 2012 — Heraeus introduced its high-reliability composite aluminum/copper (CucorAl) semiconductor bonding wire, which offers strong mechanical and electrical bonds to semiconductor pads, with good thermal properties.

During passive temperature cycling and active power cycling tests, the Al-clad Cu bonding wire showed improved long-term reliability over Al bonding wires.

The aluminum coating is soft, structured around the copper core in a way that enables a reliable bonding window with existing chip metallizations and conventional wirebond tools. The thick wire is 60-70% copper by volume. It is available in 200-500

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <s> <strike> <strong>

LIVE NEWS FEED

NEW PRODUCTS

Edwards launches new vacuum pumps at SEMICON China 2016
03/15/2016Edwards announced the availability of two new vacuum pump product families at SEMICON China: the iXM Series for semiconductor etch and chemical v...
Low-outgassing Faraday Isolators to improve lifetime and reliability of optical systems
02/18/2016Qioptiq, an Excelitas Technologies company introduces the LINOS Low-outgassing Faraday Isolators, the first of th...
Versatile high throughput SEM from JEOL
11/04/2015JEOL's new JSM-IT100 is the latest addition to its InTouchScope Series of Scanning Electron Microscopes....