Heraeus Al-clad Cu bonding wire avoids metallization changes in power semiconductors

May 14, 2012 — Heraeus introduced its high-reliability composite aluminum/copper (CucorAl) semiconductor bonding wire, which offers strong mechanical and electrical bonds to semiconductor pads, with good thermal properties.

During passive temperature cycling and active power cycling tests, the Al-clad Cu bonding wire showed improved long-term reliability over Al bonding wires.

The aluminum coating is soft, structured around the copper core in a way that enables a reliable bonding window with existing chip metallizations and conventional wirebond tools. The thick wire is 60-70% copper by volume. It is available in 200-500

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <s> <strike> <strong>

LIVE NEWS FEED

NEW PRODUCTS

New AFM with high definition electrical measurement capabilities
04/16/2015The Nano-Observer, designed by Concept Scientific Instruments, is ideal for current and future AFM research applications....
Thin wafer processing temporary bonding adhesive film for 3D wafer integration
03/24/2015 AI Technology, Inc (AIT) is the first known provider of a film format high temperature temporary bonding adhesive for thi...
Dramatic results achieved in cleaving glass using ultra-short pulsed lasers
03/11/2015ROFIN-SINAR, Inc. introduces the SmartCleave FI laser process and the MPS glass handling system for high speed and precise cl...