RFMD intros GaN process for high-voltage power semiconductor devices

May 2, 2012 — Radio frequency component and compound semiconductor maker RF Micro Devices Inc. (Nasdaq GS:RFMD) expanded its gallium nitride (GaN) portfolio with rGaN-HV, optimized for high-voltage power devices in power conversion applications.

RFMD states that the GaN process technology reduces system cost and energy consumption in 1-50KW power conversion applications. rGaN-HV delivers device breakdown voltages up to 900V, high peak current capability, and ultra-fast switching times for GaN power switches and diodes.

RFMD foundry customers will have access to rGaN-HV, and the company will manufacture discrete power device components for customers in its Greensboro, NC, wafer fab.

rGaN-HV opens opportunities for RFMD in the high-voltage power semiconductor market at a time when improved power conversion efficiency is sought to save energy, said Bob Bruggeworth, president and CEO, RFMD. "Analysts estimate better power electronics have the potential to reduce the world’s electricity consumption by some 20%-30% by 2025," said Dr. Paula Doe, SEMI Emerging & Adjacent Markets in Potential $45B power device market looks to new substrates, packaging, process flows

The new technology expands RFMD’s existing GaN technology portfolio, which includes GaN 1 for high-power RF applications needing 400V breakdown voltage and GaN 2 for high linearity applications requiring 300V breakdown voltage.

RFMD’s Power Conversion Devices Product Line and Foundry Services Business Unit will exhibit at the PCIM Power Industry Conference, May 8-10, in Nuremberg, Germany.

RF Micro Devices, Inc. (Nasdaq GS: RFMD) designs and manufactures high-performance RF components and compound semiconductor technologies. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit www.rfmd.com.

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