ConFab interview: Bill Tobey on EUV lithography

June 6, 2012 — Bill Tobey, president of ACT International Consulting, speaks about the evolution of extreme ultra violet (EUV) lithography with Solid State Technology editor-in-chief Pete Singer at The ConFab 2012, an invitation-only meeting of the semiconductor industry.

 

EUVL needs more time, because the fundamental questions and challenges with EUV have not been resolved.

The node at which EUVL enters the semiconductor manufacturing line will impact the lithography tools. EUV could be inserted at the 16nm node, certainly below 20nm, and possibly at 8nm.

We may go back to photo optics, Tobey said, and directed self-assembly and imprint lithography are other options. The certain fact, Tobey said, is that there is a future for lithography.

See more about lithography from The ConFab 2012:

ConFab interview: Dai Nippon Printing’s Naoya Hayashi

Turning the technology knobs for system scaling

Visit the Semiconductors Channel of Solid State Technology!

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