FEI’s extreme-high-resolution SEM enables metrology on semiconductors <22nm

July 30, 2012 — FEI (NASDAQ:FEIC), imaging and analysis systems maker, launched the Verios extreme-high-resolution (XHR) scanning electron microscope (SEM) for metrology on beam-sensitive and sub-namometer-scale materials in advanced semiconductors.

The SEM can be used for process control at the 22nm semiconductor technology node and below, combined with FEI’s IC3D software. The SEM also suits materials science imaging, extending SEM into areas previously only served by tunneling electron microscopy (TEM) or other techniques.

The Verios provides sub-nanometer resolution and enhanced contrast for beam-sensitive materials. A second-generation FEI XHR SEM, it enables sensitivity to surface detail even at low kV, thanks to advanced optics. Users can switch quickly between various operating conditions, maintain sample cleanliness, and obtain sub-nanometer resolution at any accelerating voltage from 1 kV to 30 kV. New detection technologies come from optimized signal collection and advanced filtering abilities, for better contrast generation and metrology on a greater range of samples such as non-conductive or beam-sensitive materials.

FEI (Nasdaq: FEIC) is a leading diversified scientific instruments company providing electron- and ion-beam microscopes and solutions for nanoscale applications across many industries. More information can be found at: www.fei.com.

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