Cree intros 150mm 4HN SiC epi wafers Cree, Inc. (Nasdaq: CREE) announced the availability of high quality, low micropipe 150mm 4H n-type silicon carbide (SiC) epitaxial wafers. 150mm epitaxial wafers with highly uniform epitaxial layers as thick as 100µm are available for immediate purchase. SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. 150mm diameter single crystal SiC substrates enable cost reductions and increased throughput, while bolstering the continued growth of the SiC industry. Light-emitting diodes (LEDs) are typically manufactured on sapphire (Al2O3) substrates, about 90% of the blue LEDs currently in production. Silicon carbide (SiC) substrates are used for virtually all the remaining 10% of blue LEDs. In the SiC substrate business, Cree holds about 50% market share on a worldwide basis.