TSMC integrates Ge on Si in p-type FinFETs

Researchers are investigating the use of high electron-mobility materials as a way to improve FinFET performance, such as germanium (Ge) for the channels in p-type transistors. But it is difficult to grow Ge directly on a silicon substrate and usually many interface layers are built, each successive layer having a greater concentration of germanium. However, this gives rise to unwanted complexity and cost.

At this year’s International Electron Devices Meeting (IEDM), foundry TSMC will describe an alternative: a heterogeneous epitaxial growth process which for the first time enables Ge to be directly grown on Si. With careful process optimization, the researchers determined that when a fin’s height-width aspect ratio is ~1.4 or greater, imperfections at the Ge-Si interface (called threading dislocations) will be confined to the bottom part of the fin, leaving its top portion—the active area—defect-free. They demonstrated the technique by building devices with excellent subthreshold characteristics (slope=74mV/dec), good short-channel-effects control and high performance (1.2mA/µm at Vdd=1V). The work paves the way for the use of Ge in future p-type FinFETs.

The schematics show representations of the threading dislocations in (a) wide and (b) narrow active areas. In (b) the threading dislocations terminate at the sidewalls, leaving the top part defect-free.

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <strike> <strong>

NEW PRODUCTS

Spectral reflectometer for film thickness measurement
04/08/2014Verity Instruments, Inc. is pleased to announce the availability of its new SP2100 Spectral Reflectometer designed for film thickness measurement f...
New Kimtech Pure G3 EvT nitrile gloves
04/03/2014Kimberly-Clark Professional has introduced a new glove that is designed to provide process protection for the semiconductor and electronics industries....
UVOTECH releases UV-Ozone Cleaning System
04/03/2014Using a UV-Ozone Cleaner, near atomically clean surfaces can be achieved in minutes without any damage to your devices. ...