#1: Triangular MOSFETs with InGaAs Channels

Slide 1

Triangular MOSFETs with InGaAs Channels: InGaAs is a promising channel material for high-performance, ultra low-power n-MOSFETs because of its high electron mobility, but multiple-gate architectures are required to make the most of it, because multiple gates offer better control of electrostatics. In addition, it is difficult to integrate highly crystalline InGaAs with silicon, so having multiple gates offers the opportunity to take advantage of the optimum crystal facet of the material for integration. A research team led by Japan’s AIST built triangular InGaAs-on-insulator n-MOSFETs with smooth side surfaces along the <111>B crystal facet and with bottom widths as narrow as 30 nm, using a metalorganic vapor phase epitaxy (MOVPE) growth technique. The devices demonstrated a high on-current of 930 µA/µm at a 300-nm gate length, showing they have great potential.

The graph above shows the devices’ high electron mobility.

(Paper 2.2, “High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Growth on Narrow Fin Structures,” T. Irisawa et al, AIST.)

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