IEDM 2012 slideshow 02

Scaling for 2D, 3D NAND memory

In an invited paper, researchers from Micron and Intel will discuss scaling directions for 2D and 3D NAND cells. They note that many 2D NAND scaling challenges are addressed by a planar floating gate (FG) cell, which has a smaller aspect ratio and less cell-to-cell interference. This figure compares a wrap FG cell (left) and a planar FG cell (right); the wrap cell is limited by a required aspect ratio of >10 for both the wordline and the bitline direction in a sub-20nm cell. The planar cell eliminates this limitation. (#2.1: Scaling Directions for 2D and 3D NAND Cells" [Invited])


A wrap FG cell (left) and a planar FG cell (right).

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