IEDM 2012 slideshow 03

Stressed-out 14nm FinFETs with SiGe channels

In a jointly authored paper, researchers from imec, GlobalFoundries and Samsung provide calculations of stress enhanced mobilities for n- and p-FinFETs with both Si and Ge channels for the 14nm node and beyond. Results indicate that both for nFETs and pFETs, Ge is "very interesting," provided the correct stressors are used to boost mobility. They conclude that strained channels grown on a strain relaxed buffer is effective for 14nm nodes and scalable to future nodes. TCAD simulation trends are experimentally confirmed by nano-beam diffraction (NBD). (#6.5: "Stress Simulations for Optimal Mobility Group IV p- and nmOS FinFETs for the 14nm Node and Beyond")

 

XTEM of a Ge-channel FET with SiGe source/drain.

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