The shift to materials-enabled 3D

ThakurRandhir Thakur, Executive Vice President, General Manager, Silicon Systems Group, Applied Materials, Inc.

Innovations in mobile computing and communications will continue to be a driving factor for the semiconductor equipment industry. To enable high performance chips for new and exciting applications, our foundry/logic and memory customers that manufacture semiconductors are migrating from lithography-enabled 2D transistors and 2D NAND to materials-enabled 3D transistors and 3D NAND.  These device architecture inflections require significant advances in precision materials engineering in conformal materials deposition, materials removal, and materials modification.  Selective materials processes will play a more prominent role.  Smaller features and atomic-level thin films also make interface engineering and process integration more critical than ever.

Some significant ongoing industry developments to highlight are the new materials and architectural changes in the transistor to reduce power consumption and drive performance gains. The increased complexity of the 3D FinFET architecture in combination with continued scaling requires great precision in structure formation, especially when forming the gate. More advanced atomic-level process technologies in selective epitaxy, metal gate, implant, anneal, etch, and planarization are needed. Also critical to meeting the industry’s precision engineering requirements are improved materials that offer more choices for increasing selectivity, control and performance. And, let’s not forget the advances underway to develop new higher mobility channel materials.

Another exciting inflection in 2014 is our memory customers’ transition from planar two-dimensional NAND to vertical three-dimensional NAND. 3D technology holds the promise of terabit-era capacity and lower costs by enabling denser device packing, the most fundamental requirement for memory. There are complex device performance and yield challenges, such as distortion-free high aspect ratio etching, staircase case patterning with precise step-width control, uniform and repeatable gate stack deposition.

<<Previous   1   2   3   4   5   6   7   8   9   10    Next>>

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <s> <strike> <strong>

LIVE NEWS FEED

NEW PRODUCTS

Edwards launches new Smart Thermal Management System at SEMICON Europa 2016
10/25/2016Smart TMS helps semiconductor, flat panel display and solar manufacturers improve their process performance and safety by red...
Tektronix introduces Keithley S540 power semiconductor test system
10/19/2016Tektronix, Inc., a worldwide provider of measurement solutions, today introduced the Keithley S540 Power Semiconductor Test System, a ...
Novel Wafer Analyzer for up to 300mm wafer using high speed Raman Imaging Technology
08/08/2016Nanophoton introduces RAMANdrive - a new Wafer Analyzer - for a wide range of applications at semiconductor market a...