Process Integration of 3D Capacitors into 22nm Interconnect Stacks

3D capacitors embedded into the BEOL

3D capacitors embedded into the BEOL

Embedded DRAM is becoming important for high-performance ICs. This necessitates integrating sophisticated 3D capacitor structures into the interconnect stack. This paper from Intel shows a process integration flow for a 3D capacitor that provides excellent yield and retention times greater than 100us at 95oC. The 3D capacitor advances allow an industry-leading 17.5Mb/mm2 memory array density.

[8.1. R. Brain, et al., “Integration of a 3D Capacitor into a Logic Interconnect Stack for High Performance Embedded DRAM SoC Technology”, Intel (Invited)]

[<<PREV] [1]  [2]  [3]  [4]  [5]  [6]  [7] [NEXT>>]

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <s> <strike> <strong>

LIVE NEWS FEED

NEW PRODUCTS

Novel Wafer Analyzer for up to 300mm wafer using high speed Raman Imaging Technology
08/08/2016Nanophoton introduces RAMANdrive - a new Wafer Analyzer - for a wide range of applications at semiconductor market a...
Pfeiffer Vacuum introduces HiPace 2800 turbopump for ion implantation applications
07/06/2016Pfeiffer Vacuum has introduced the HiPace 2800 IT turbopump that is designed for ion implantation applications....
NanoFocus AG introduces new inspection system for semiconductors industry
05/31/2016NanoFocus AG, the developer and manufacturer of optical 3D surface measuring technology, introduces the new measuring system µ...