Fujitsu touts GaN HEMT millimeter-wave transceiver Fujitsu Laboratories Limited has launched millimeter-wave transceiver based on gallium-nitride high-electron mobility transistor (GaN HEMT). The device operates at frequencies up to the millimeter-wave band and features an output of 10W. Until now, developing high-output modules that operate in the millimeter-wave band have required modules consisting of separately packaged components to allow for sufficient heat dissipation. As a result, it has been difficult to produce compact modules. In addition, because the occurrence of signal loss tends to increase in internal module terminal connector components at higher frequencies, reaching millimeter-wave operations has proved to be challenging. The new high-output millimeter-wave transceiver module developed by Fujitsu uses a heat sink embedded with multi-layer ceramic technology capable of efficiently dissipating heat. Through its unique architecture that reduces signal loss occurring in internal terminal connector components, the transceiver module can achieve millimeter-wave operations. With dimensions of 12mm × 36mm × 3.3mm, the new module measures less than one-twentieth the size of a conventional combined unit. Using the new technology, it is possible to combine multiple chips within a single unit, thereby enabling the development of more compact radar devices and wireless communications equipment. Fujitsu Laboratories plans to put this technology to use in a wide range of applications that require compact modules with high output across wide bandwidths, including wireless devices and radar systems.