Imec reveals method of damage free cryogenic etching of ultralow-k dielectrics

Imec announced on Monday a cryogenic etching method that protects the surface of porous ultralow-k dielectrics against excessive plasma induced damages.

As semiconductor technology scales below the 20nm node, the capacitance increases between nearby conductive portions of high-density integrated circuits, resulting in loss of speed and cross-talk of the device. To control the increase in capacitance in deeply-scaled devices, insulating layers of porous low-k dielectrics are integrated through plasma etching. However, plasma etching exposes the dielectrics to active plasma radicals that penetrate deeply into the porous substrate, which then react and change the composition of the dielectric.

To bypass such damages, imec developed a new cryogenic etching method. By applying very low (cryogenic) temperatures during etching, a condensation of etch products in the pores of the low-k material, results in a protection of the dielectrics’ surface. Imec demonstrated the method on a porous organosilicate (OSG) film. The results showed that no carbon depletion occurred when the wafer temperature remained below a certain critical level during plasma etching.

“Our cryogenic etch method solves a key issue to further advancing scaling limits. It overcomes the disadvantages of current methods used to reduce plasma induced damage, such as dielectric etch at regular temperatures or low-k repair or high temperature pore stuffing, and it enables sub k=2.0 materials for integration,” stated Zsolt Tokei, program director interconnect at imec. “Our method is a true solution to further drive the development of next-generation, deeply-scaled technologies.”

Imec exhibits at SEMICON West, July 9-11, 2013. To learn more about imec and its new cryogenic etching method, please visit booth 1741, South hall.

 

Graph: Etching at cryogenic temperature results in targeted k-value

POST A COMMENT

Easily post a comment below using your Linkedin, Twitter, Google or Facebook account. Comments won't automatically be posted to your social media accounts unless you select to share.

Leave a Reply

Your email address will not be published. Required fields are marked *

You may use these HTML tags and attributes: <a href="" title=""> <abbr title=""> <acronym title=""> <b> <blockquote cite=""> <cite> <code> <del datetime=""> <em> <i> <q cite=""> <strike> <strong>

LIVE NEWS FEED

NEW PRODUCTS

New AFM with high definition electrical measurement capabilities
04/16/2015The Nano-Observer, designed by Concept Scientific Instruments, is ideal for current and future AFM research applications....
Thin wafer processing temporary bonding adhesive film for 3D wafer integration
03/24/2015 AI Technology, Inc (AIT) is the first known provider of a film format high temperature temporary bonding adhesive for thi...
Dramatic results achieved in cleaving glass using ultra-short pulsed lasers
03/11/2015ROFIN-SINAR, Inc. introduces the SmartCleave FI laser process and the MPS glass handling system for high speed and precise cl...