Alpha and Omega Semiconductor, a designer, developer and global supplier of a broad range of power semiconductors and power ICs, today launched the AOZ5019, a third-generation high efficiency power module with an EZPair package. This new generation supersedes the previous generation in a smaller package and with a higher frequency. The AOZ5019 is offered in a 23-pin 3.5mm x 5mm QFN package that integrates a dual gate driver and two optimized MOSFETs which combined produce a high efficiency DC-DC synchronous buck power stage and allows switching frequencies up to 1.5MHz. The new device enables high power density voltage regulator solutions ideal for notebook PCs, servers, and graphic cards applications.
The AOZ5019 utilizes AOS’s proprietary trench MOSFET and packaging technologies which improves the efficiency, thermal performance, and package size over the previous generation solution. For example, the efficiency is one percent higher at a heavy load condition compared to leading competitor, the package size has been reduced to 3.5x5mm, and effective thermal pad area has been improved by three times compared to discrete solutions.
“Our third-generation DrMOS meets the ever increasing power density requirements of high-end computing applications by reducing the solution size by two-thirds compared to discrete solutions. In addition, the parasitic inductance between the MOSFETs and driver is minimized, allowing switching frequencies up to 1.5MHz and faster dynamic response times,” said Daniel Chang, Vice President of Power IC Product Line at AOS.