Chemical vapor deposition is a process used to deposit diverse thin films of crystalline or amorphous metal, inter-metallic compounds, oxides, nitrides, carbides, and inorganic polymer. In the semiconductor manufacturing process, CVD is used to create varied layers, such as interlayer dielectric (ILD), intermetal dielectric (IMD), and electrode (cap and gate). In the CVD process, the selection of precursor is a very important step, and even more so when using the process to fabricate the semiconductor that requires for a more complex three dimensional structure.
CVD precursors that are used in semiconductor manufacturing process are TEOS, B or P doping source, high k, metal (predominantly Ti source), and low k. TEOS and B, P doping sources are mostly used to create ILD and IMD layers; high k precursor is mostly used for cap or gate; and metal precursor is used for electrode. Large scale production of low k precursor started in 2009.
South Korean semiconductor manufacturers are using around 10 types of precursors, and its annual market size has reached $160 million in 2012.
CVD precursor has gained its critical position in South Korea’s semiconductor materials industry, and this report provides in-depth analysis of its demand, supply and the market competition.