Manufacturing 3D NAND designs requires overcoming formidable technical challenges to create extremely complex high-aspect-ratio structures. The resulting reliability, density, performance, and power savings benefits will continue to drive this vertical NAND transition. On December 10, 2013, Applied Materials, Inc. will host an important forum in Washington D.C. for a thought-provoking examination of the growing momentum in 3D NAND from device, system, and user perspectives.
3D NAND is clearly here to stay with leading-edge memory chipmakers focusing significant resources on this segment. But while 3D NAND promises substantial benefits in easing key planar scaling limitations, several questions remain regarding the future of this technology. How far can it be scaled? What issues will affect its scaling? Which applications will use it first? Will 3D NAND continue lowering the cost per bit? What technologies will follow?
Applied Materials and guest panelists from several industry leaders will provide insight on these critical issues in a panel titled “3D NAND Is a Reality – What’s Next?” To register for this event, please visit http://www.appliedmaterials.com/NAND-panel.
Moderator: Gill Lee, senior director, principal member of technical staff, Silicon Systems Group, Applied Materials
Ritu Shrivastava, Ph.D. – vice president, technology development, SanDisk Corporation
Chuck Dennison – senior director, process integration, Micron Technology, Inc.
Seok-Kiu Lee – vice president, head of flash device technology group, R&D division, SK hynix Inc.
Hang-Ting Lue, Ph.D. – deputy director, Nanotechnology R&D division, Macronix International Co., Ltd.
Bradley Howard, Ph.D. – vice president, advanced technology group, Etch, Applied Materials, Inc.
Where: Omni Shoreham Hotel,2500 Calvert Street NW, Washington, D.C.
When: Tuesday, December 10, 2013
5:00 – 6:00pm Shuttle from Hilton Washington Hotel
5:00 – 6:15pm Registration and Reception
6:15 – 7:30pm Panel Discussion
7:30pm Return shuttle to Hilton Washington Hotel