MACOM expands portfolio of high performance GaN components for RF solutions

M/A-COM Technology Solutions Inc., a supplier of high performance RF, microwave and millimeter wave products, today announced the availability and full technical support for 17 high-performance gallium nitride on silicon (GaN on Si) RF power transistors and amplifiers recently added to the MACOM product portfolio as a result of its acquisition of Nitronex, LLC.

GaN is truly a dislocating technology, offering breakthrough bandwidth and efficiency for RF applications, including defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and VHF/UHF/L-Band Radar. With the addition of these GaN-based RF solutions, MACOM now has the broadest family of GaN technology in the industry, including fundamental and innovative GaN on Si epitaxial and pendeoepitaxial semiconductor process technology and materials.

“Broadening our portfolio of GaN on Si and GaN on SiC technologies enables our customers greater flexibility in selecting the best solution to solve their RF and microwave design challenges,” said Suja Ramnath, Senior Vice President and General Manager, MACOM. “This, combined with MACOM’s decades of expertise in large-scale RF semiconductor technology, along with surety of supply and deep technical support, is enabling us to accelerate mainstream GaN adoption across the industry.”

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