ON Semiconductor Unveils New Family of Ultra-Low Power Precision Operational Amplifiers; New zero drift, low voltage devices highly suited to precision applications in industrial, consumer, wireless, IoT and automotive where strong stability across wide operating temperature ranges is mandated
December 17, 2014
ON Semiconductor (Nasdaq: ONNN ), driving energy efficiency innovations, has introduced a family of affordable, precision CMOS operational amplifiers (op amps) that deliver zero drift operation and industry leading quiescent current for front-end amplifier circuits and power management designs. Targeted at industrial, white goods, telecom, wearables, Internet-of-Things (IoT), test equipment and instrumentation applications, the NCS325 and NCS333 op amp devices enhance the accuracy of motor control feedback and power supply control loops, thereby contributing to higher overall system efficiency. These devices are complemented by the new NCV333 automotive-qualified (AEC-Q100 grade 1) op amp offering similar functional performance for power train, braking, electronic power steering, valve controls, fuel pump and fuel injection system applications. Featuring high DC precision parameters, such as the 10 micro Volts (µV) maximum input offset voltage at ambient temperature and the 30 nV/°C of offset temperature drift, make these amplifier devices extremely well optimized for low side current sensing and voltage differential measurement on front-end sensor functions. Minimal voltage variations over temperature along with close to zero offset ensure the efficiency of systems exposed to wide operating temperature ranges without the need for complex software calibration algorithms, resulting in a more manageable design and longer product lifespan.

GLOBALFOUNDRIES and Cadence Deliver First SoC Enablement Solution Featuring ARM Cortex-A17 Processor in 28nm-SLP Process; GLOBALFOUNDRIES also tapes out second ARM Cortex-A17 processor using full Cadence digital implementation and signoff flow
December 17, 2014
Cadence Design Systems, Inc. (NASDAQ: CDNS), a leader in global electronic design innovation, and GLOBALFOUNDRIES, a leading provider of advanced semiconductor manufacturing technology, today announced the delivery of quad-core silicon built around the ARM® Cortex®-A17 processor implemented using GLOBALFOUNDRIES' 28nm Super Low Power (28nm-SLP) process with High-k Metal Gate (HKMG) technology. GLOBALFOUNDRIES utilized Cadence® tools exclusively to achieve 2.0GHz processor performance at typical operating conditions, which matched pre-silicon design performance predicted by Cadence Tempus(TM) Timing Signoff Solution analysis.

Fujitsu Kansai-Chubu Net-Tech Shortens Design Time by 40 Percent on 100G Transport System with Cadence High-Level Synthesis Solution
December 17, 2014
Cadence Design Systems, Inc. (NASDAQ: CDNS) today announced that Fujitsu Kansai-Chubu Net-Tech Limited (KCN) utilized the Cadence® C-to-Silicon Compiler to shorten turnaround time by 40 percent compared to its traditional RTL process for a complex 100G transport system design.

Synopsys' PrimeTime ADV Achieves Rapid Adoption for Fastest Timing Closure; Adopted by More than 70 Semiconductor Companies with Over 50 Tapeouts in First 9 Months
December 17, 2014
 Synopsys, Inc. (Nasdaq: SNPS), a global leader providing software, IP and services used to accelerate innovation in chips and electronic systems, today announced its PrimeTime® ADV advanced timing closure and signoff solution has been adopted by more than 70 leading semiconductor companies and enabled more than 50 successful tapeouts in just nine months since it became generally available. The key to its rapid adoption is ease of integration into existing timing closure flows, fast turnaround time and the ability to significantly reduce the number of timing ECO (engineering change order) iterations on designs across a broad range of applications and process nodes. Companies that have deployed PrimeTime ADV include Achronix Semiconductor, All Winner Technology, GUC, Infineon Technologies, Renesas, Samsung, STMicroelectronics, Toshiba and others. Timing closure is one of the biggest challenges highlighted by chip designers, often encompassing 30 percent of the physical implementation design schedule.

Renesas Electronics Announces Development of SRAM Using Leading-Edge 16 nm FinFET for Automotive Information Systems; Achieves Both 0.7 V Low-Voltage Operation and 641 ps High-Speed Operation.
December 17, 2014
Renesas Electronics Corporation (TSE: 6723), a premier provider of advanced semiconductor solutions, today announced the development of a new circuit technology for automotive information SoCs (system on chips) at 16 nanometer (nm) and beyond. Using this new circuit technology, Renesas tested the prototype of an SRAM, at the 16 nm node as the cache memory for CPU and real-time image processing blocks in an SoC, and successfully confirmed that this SRAM operates at the high speed of 641 ps (picosecond: 1/1,000,000,000,000 of a second) under the low-voltage condition of 0.7 V. Recently, automotive information systems, such as car navigation systems and advanced driver assistance systems (ADAS), are designed with the automatic driving systems of the future in mind, and have seen significant evolution. As a result, there are now strong demands for increased performance in aspects such as lower voltage operation and higher operating speeds in the CPU and real-time image processing, and the planar MOSFET devices used up to now are said to have reached their limits.

Broadcom Announces Set-top Box Platform to Accelerate Mexico's Analog-to-Digital TV Transition; Low-cost Digital Converters Deliver Combination of New Features and Reliability to Consumers
December 17, 2014
News Highlights: Device builds on Broadcom® STB platform to convert millions of Mexican homes from analog-to-digital TV Offers consumers cost-effective, feature-optimized, reliable digital converter boxes based on proven technology Highly responsive user experience with increased system performance, electronic program guide, exclusive fast channel change, audio leveling and USB personal video recorder Broadcom Corporation (NASDAQ: BRCM), a global innovation leader in semiconductor solutions for wired and wireless communications, today announced a new digital-terrestrial video platform for Mexico as the country transitions from analog-to-digital television broadcasts. The conversion is scheduled for completion December 31, 2015 and will provide millions of television subscribers in Mexico with high definition (HD) content. Broadcom's BCM7543 custom-engineered silicon offers a cost-effective and featured-optimized device for new HD converter boxes and set-top box (STB) platforms, providing a wider choice of content and value-added features. To learn more, visit Broadcom'sNewsroom.

Raytheon Gallium Nitride Technology Validated For Space Applications
December 17, 2014
 Satellites may soon carry Raytheon's Gallium Nitride (GaN) technology into Earth orbit.  Raytheon Company (NYSE: RTN) has successfully validated its GaN Monolithic Microwave Integrated Circuit (MMIC) technology for use in space-bound equipment.

Kinaxis RapidResponse Solution Chosen to Support ON Semiconductor Global Supply Chain Management; Leading Semiconductor Supplier to Manage Multiple Supply Chain Processes with Cloud Service
December 17, 2014
 Kinaxis® (TSX:KXS), provider ofRapidResponse®, delivering cloud-basedSCM and S&OP applications, today announced thatON Semiconductor, a leading semiconductor supplier offering a comprehensive portfolio of energy efficient solutions has selected Kinaxis RapidResponse to effectively manage supply chain processes for the company's operations in North America, Europe and Asia Pacific.

Toshiba Launches 6TB Enterprise Capacity HDD Models; The MG04 series delivers impressive capacity and offers Toshiba persistent write cache technology
December 17, 2014
Toshiba Corporation 's (TOKYO:6502) Semiconductor & Storage Products Company today announced the addition of 6TB[1] SATA and SAS models to its MG04 series of 3.5-inch form factor enterprise capacity class of hard disk drives (HDD). New SAS interface models provide the benefits of 12Gbit/s[2] transfer rate for 6TB, 5TB, 4TB and 2TB HDDs. Sample shipment will begin in CQ1 of 2015. Toshiba: 6TB Enterprise Capacity HDD (Photo: Business Wire)

US Contract Notice: Defense Logistics Agency Issues Solicitation for "SEMICONDUCTOR DEVICE"
December 17, 2014
Defense Logistics Agency, DLA Acquisition Locations Officer has issued requirement for "SEMICONDUCTOR DEVICE." Solicitation no. SPM7M113UC550 Posted on: December 17, 2014


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