Headlines


Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers
January 27, 2015
FULL TEXT (ProQuest: ... denotes non-US-ASCII text omitted.) Academic Editor:Michele Norgia 1, Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany Received 21 February 2014; Accepted 30 June 2014; 13 July 2014 This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Enhancement of Photon Absorption on Ba x Sr 1 - x TiO 3 Thin-Film Semiconductor Using Photonic Crystal
January 27, 2015
FULL TEXT (ProQuest: ... denotes non-US-ASCII text omitted.) Abd. Wahidin Nuayi 1,2 and Husin Alatas 1 and Irzaman S. Husein 1 and Mamat Rahmat 1 Academic Editor:Augusto Beléndez 1, Department of Physics, Bogor Agricultural University, Jl. Meranti, Kampus IPB Darmaga, Bogor 16680, Indonesia 2, Department of Physics, University of Gorontalo, Jl. Jend. Sudirman No. 6 Kota Gorontalo, Gorontalo 96128, Indonesia Received 17 July 2013; Accepted 3 November 2013; 9 January 2014

Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors Znx Cd1-x S , Cux Cd1-x S and Cux Zn1-x S
January 27, 2015
FULL TEXT (ProQuest: ... denotes non-US-ASCII text omitted.) Sandra Andrea Mayén-Hernández 1 and David Santos-Cruz 1 and Francisco de Moure-Flores 1 and Sergio Alfonso Pérez-García 2 and Liliana Licea-Jiménez 2 and Ma. Concepción Arenas-Arrocena 3 and José de Jesús Coronel-Hernández 1 and José Santos-Cruz 1 Academic Editor:Jiaguo Yu

Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features
January 27, 2015
FULL TEXT M. Melvin David Kumar 1 and Ju-Hyung Yun 1,2 and Joondong Kim 1 Academic Editor:Yuexiang Li 1, Department of Electrical Engineering, Incheon National University, Incheon 406772, Republic of Korea 2, Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260, USA Received 26 May 2014; Revised 29 August 2014; Accepted 30 August 2014; 22 September 2014

FORM 8-K: PERICOM SEMICONDUCTOR FILES CURRENT REPORT
January 27, 2015
WASHINGTON, Jan. 27 -- Pericom Semiconductor Corp., Milpitas, Calif., files Form 8-K (current report) with Securities and Exchange Commission on Jan. 26.

Transphorm and Fujitsu Semiconductor Announce the Start of Mass Production of Transphorm's GaN Power Devices; Production at CMOS-compatible fab enables GaN to meet the increasing demand of the market
January 27, 2015
 Transphorm Inc., Transphorm Japan Inc., and Fujitsu Semiconductor Limited announced today that Fujitsu Semiconductor group's CMOS-compatible, 150mm wafer fab in Aizu-Wakamatsu, Fukushima, Japan, has started mass production of Gallium Nitride (GaN) power devices for switching applications. The large-scale, automotive-qualified facility, which is providing exclusive GaN foundry services for Transphorm, will allow dramatic expansion of Transphorm's GaN power device business. This stepped up production can satisfy the increasing market demands for GaN devices, thereby enabling the next wave of compact, energy-efficient power conversion systems.

PEREGRINE SEMICONDUCTOR: Entered Into MOU to Settle Class Actions
January 27, 2015
Peregrine Semiconductor Corporation said in its Form 8-K CurrentReport filed with the Securities and Exchange Commission onNovember 10, 2014, that the Company entered on November 10, 2014,entered into a memorandum of understanding (the "MOU") withplaintiffs and other named defendants regarding the settlement ofa number of putative class action lawsuits filed in the DelawareChancery Court (the "Court"), as well as the settlement of allrelated claims that were or could have been asserted in otheractions, in response to the announcement of the execution of anAgreement and Plan of Merger, dated as of August 22, 2014 (the"Merger Agreement"), by and between Peregrine, Murata ElectronicsNorth America Ltd. ("Murata") and PJ Falcon Acquisition Company,Ltd., a wholly-owned subsidiary of Murata. Pursuant to the MergerAgreement, Peregrine will become a wholly owned subsidiary ofMurata (the "Merger").

Rare Earths Elements in High-Tech Industries: Market Analysis and Forecasts amid China's Trade Embargo
January 26, 2015
Rare earth elements are used in CMP polishing slurries and as high-k dielectrics in the semiconductor industry. . Prices of ceria, used in STI planarization slurries, have increased 1300% between 2009 and 2010 because of an embargo by China, home to 97% of the rare earth mines. This report analyzes the impact of the embargo on high-tech industries such as semiconductors, HDDs, LCDs, consumer products, and green technology.

Top 20 Advanced Driver Assistance Systems (ADAS) Companies 2015 : Suppliers of Sensors and Semiconductors to Automotive OEMs
January 26, 2015
Report Details As Automated Parking, Adaptive Cruise Control and other ADAS End-User Applications expand from the high-end to mid-range car segment and the NHTSA announces its rear-view camera mandate in North America, our focus is on identifying which company leads the ADAS Market in 2014 and why.

New Edition of the International Technology Roadmap for PV (ITRPV) to be Released in China
January 26, 2015
The Semiconductor Equipment and Materials International issued the following news release: The new edition of the SEMI International Technology Roadmap for PV (ITRPV) will be presented and released on April 29, 2015 in Shanghai, China, followed by a presentation on 11 June 2015 during Intersolar Europe in Munich, Germany. It will be the first time that the report will be created with the support of two new co-chairs from Taiwan -- Dr. Andy Luan, Neo Solar Power Corp (NSP) and Dr. Kirin Wang, Motech. The 2015 edition of the document focuses on crystalline silicon manufacturing. With more than 60 contributors from leading institutes, equipment and materials suppliers as well as cell and module manufacturers, the ITRPV continues to be the leading technical manufacturing guideline for the crystalline silicon PV industry.


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