Headlines


Enhancement of Photon Absorption on Ba x Sr 1 - x TiO 3 Thin-Film Semiconductor Using Photonic Crystal
January 28, 2015
FULL TEXT (ProQuest: ... denotes non-US-ASCII text omitted.) Abd. Wahidin Nuayi 1,2 and Husin Alatas 1 and Irzaman S. Husein 1 and Mamat Rahmat 1 Academic Editor:Augusto Beléndez 1, Department of Physics, Bogor Agricultural University, Jl. Meranti, Kampus IPB Darmaga, Bogor 16680, Indonesia 2, Department of Physics, University of Gorontalo, Jl. Jend. Sudirman No. 6 Kota Gorontalo, Gorontalo 96128, Indonesia Received 17 July 2013; Accepted 3 November 2013; 9 January 2014

Combination of Transverse Mode Selection and Active Longitudinal Mode-Locking of Broad Area Semiconductor Lasers
January 28, 2015
FULL TEXT (ProQuest: ... denotes non-US-ASCII text omitted.) Academic Editor:Michele Norgia 1, Integrated Optoelectronics and Microoptics Research Group, Physics Department, Kaiserslautern University of Technology, P.O. Box 3049, D-67653 Kaiserslautern, Germany Received 21 February 2014; Accepted 30 June 2014; 13 July 2014 This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors Znx Cd1-x S , Cux Cd1-x S and Cux Zn1-x S
January 28, 2015
FULL TEXT (ProQuest: ... denotes non-US-ASCII text omitted.) Sandra Andrea Mayén-Hernández 1 and David Santos-Cruz 1 and Francisco de Moure-Flores 1 and Sergio Alfonso Pérez-García 2 and Liliana Licea-Jiménez 2 and Ma. Concepción Arenas-Arrocena 3 and José de Jesús Coronel-Hernández 1 and José Santos-Cruz 1 Academic Editor:Jiaguo Yu

Metal/Semiconductor and Transparent Conductor/Semiconductor Heterojunctions in High Efficient Photoelectric Devices: Progress and Features
January 28, 2015
FULL TEXT M. Melvin David Kumar 1 and Ju-Hyung Yun 1,2 and Joondong Kim 1 Academic Editor:Yuexiang Li 1, Department of Electrical Engineering, Incheon National University, Incheon 406772, Republic of Korea 2, Department of Electrical Engineering, University at Buffalo, State University of New York, Buffalo, NY 14260, USA Received 26 May 2014; Revised 29 August 2014; Accepted 30 August 2014; 22 September 2014

Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices
January 28, 2015
FULL TEXT (ProQuest: ... denotes non-US-ASCII text omitted.) N. P. Maity 1 and Reshmi Maity 1 and R. K. Thapa 2 and S. Baishya 3 Academic Editor:Maria A. Loi 1, Department of Electronics &; Communication Engineering, Mizoram University (A Central University), Aizawl 796004, India 2, Department of Physics, Mizoram University (A Central University), Aizawl 796004, India 3, Department of Electronics &; Communication Engineering, National Institute of Technology, Silchar 788010, India Received 25 March 2014; Revised 18 July 2014; Accepted 1 August 2014; 20 August 2014

Density Functional Theory Simulations of Semiconductors for Photovoltaic Applications: Hybrid Organic-Inorganic Perovskites and III/V Heterostructures
January 28, 2015
FULL TEXT (ProQuest: ... denotes non-US-ASCII text omitted.) Jacky Even 1 and Laurent Pedesseau 1 and Eric Tea 1, 2 and Samy Almosni 1 and Alain Rolland 1 and Cédric Robert 1 and Jean-Marc Jancu 1 and Charles Cornet 1 and Claudine Katan 3 and Jean-François Guillemoles 2 and Olivier Durand 1 Academic Editor:Patrick Meyrueis

Low-Cost ZnO:YAG-Based Metal-Insulator-Semiconductor White Light-Emitting Diodes with Various Insulators
January 28, 2015
FULL TEXT Academic Editor:Hao-Chung Kuo Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Chung-Hsiao E. Road, Taipei 106, Taiwan Received 13 March 2014; Accepted 9 July 2014; 15 July 2014 This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. 1. Introduction

FORM 8-K: PERICOM SEMICONDUCTOR FILES CURRENT REPORT
January 27, 2015
WASHINGTON, Jan. 27 -- Pericom Semiconductor Corp., Milpitas, Calif., files Form 8-K (current report) with Securities and Exchange Commission on Jan. 26.

Fluoropolymer Market in the Healthcare Industry 2019 - Plastics Replacement Drives Growth
January 27, 2015
ReportsnReports.com offers Global Fluoropolymer Market in the Healthcare Industry 2015-2019 a new research report in its store. Increased expenditure in R&D, owing to the growing competition and the development of environment-friendly methods of production, is one key trend in this market. Manufacturers have increased their emphasis on R&D owing to the rapid increase in the number of innovations in the Healthcare industry in recent years. The Global Fluoropolymer market in the Healthcare industry is expected to grow at a constant pace and post a CAGR of 7.36% during the period 2014-2019. Complete research is available athttp://www.reportsnreports.com/reports/328546-global-fluoropolymer-market-in-the-healthcare-industry-2015-2019.html. The replacement of plastics by fluoropolymers in packaging applications is expected to propel the growth of the market. Fluoropolymers are extensively used for the packaging of tablets and capsules in the Healthcare industry. They can withstand high temperatures of sterilization and, hence, are used for etching over implantable medical devices such as catheters. "Increased public awareness about the significance and positive effects of healthcare products in the developing countries, along with favorable government policies, are encouraging foreign players to open their production facilities in the APAC region," says an analyst of the team that worked on this report.

PEREGRINE SEMICONDUCTOR: Entered Into MOU to Settle Class Actions
January 27, 2015
Peregrine Semiconductor Corporation said in its Form 8-K CurrentReport filed with the Securities and Exchange Commission onNovember 10, 2014, that the Company entered on November 10, 2014,entered into a memorandum of understanding (the "MOU") withplaintiffs and other named defendants regarding the settlement ofa number of putative class action lawsuits filed in the DelawareChancery Court (the "Court"), as well as the settlement of allrelated claims that were or could have been asserted in otheractions, in response to the announcement of the execution of anAgreement and Plan of Merger, dated as of August 22, 2014 (the"Merger Agreement"), by and between Peregrine, Murata ElectronicsNorth America Ltd. ("Murata") and PJ Falcon Acquisition Company,Ltd., a wholly-owned subsidiary of Murata. Pursuant to the MergerAgreement, Peregrine will become a wholly owned subsidiary ofMurata (the "Merger").


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