Headlines


FORM 8-K: FREESCALE SEMICONDUCTOR FILES CURRENT REPORT
August 30, 2014
WASHINGTON, Aug. 30 -- Freescale Semiconductor Ltd., Austin, Texas, files Form 8-K (current report) with Securities and Exchange Commission on Aug. 29. State or other jurisdiction of incorporation: Bermuda

INTEGRATED SILICON SOLUTION REPORTS MULTIPLE TRANSACTIONS BY EXECUTIVE CHAIRMAN LEE (California)
August 30, 2014
WASHINGTON, Aug. 30 -- Integrated Silicon Solution Inc. (ISSI), Milpitas, Calif., has filed a Form 4 with the Securities and Exchange Commission noting the change in the beneficial interest held by Executive Chairman Shueh Mien Lee Jimmy, Milpitas.

UMC Joins Fujitsu's New Foundry Company
August 29, 2014
 United Microelectronics Corporation (NYSE: UMC; TWSE: 2303) ("UMC") and Fujitsu Semiconductor Limited ("Fujitsu Semiconductor") today announced an agreement for UMC to become a minority shareholder of a newly formed subsidiary of Fujitsu Semiconductor that will include its 300mm wafer manufacturing facility located in Kuwana, Mie, Japan ("the Company"). UMC's advanced 40nm technology will be also licensed to Fujitsu Semiconductor. The Company will provide high quality foundry services to customers by combining Fujitsu Semiconductor's low power process and embedded-memory technology with UMC's foundry expertise and advanced process technology. Under the terms of the agreement, UMC will invest JPY 5 billion as an initial investment by which UMC will subscribe for approximately 9.3% of the Company's shares.

Fairchild Closing Penang Plant
August 29, 2014
Here is the text of news released by official news agency Bernama on its website: Fairchild Semiconductor is closing down its Bayan Lepas manufacturing plant along with its facilities in West Jordan, Utah and Bucheon, South Korea as the group plans to consolidate is operations.

FORM 8-K: Freescale Semiconductor, Ltd FILES Current report
August 29, 2014
Freescale Semiconductor, Ltd, Bermuda, has filed FORM 8-K (Current report) with Securities and Exchange Commission on August 29, 2014 State or other Jurisdiction of Incorporation: Bermuda

Livermore Team Awarded for Hydrogen Production Research.SD 2813 Industrial gasesPR 2813720 (Hydrogen)
August 29, 2014
  Livermore, California (PRWEB) August 29, 2014           Three Lawrence Livermore researchers have received the Department of Energy's 2014 Hydrogen Production R&D Award for their research in producing hydrogen photoelectrochemically -- by splitting water using sunlight.     Shared with collaborators from the National Renewable Energy Laboratory (NREL) and the University of Nevada, Las Vegas (UNLV), the award recognizes the team for its work developing models of photoelectrochemical solar-hydrogen production and corrosion processes.           These models have been crucial in the development of corrosion mitigation strategies for high-efficiency devices based on III-V semiconductor materials, offering a viable pathway to meet DOE's ultimate cost targets in renewable hydrogen production.

NanoMarkets Projects Next-Generation Solar PV Materials to Become a $2 Billion Market by 2021.
August 29, 2014
  Glen Allen, VA (PRWEB) August 29, 2014       The total market value of emerging PV technologies -- advanced crystalline silicon cell architectures, thin films, organic and dye-sensitized technologies, and various nanomaterials -- will surge to $262 million in 2017 and nearly $2.1 billion by 2021, up from just $20 million today, according to a new report from industry analyst firm NanoMarkets. Details of the new report "Materials for Next-Generation Photovoltaics – 2014-2021," including a downloadable excerpt, are available at:

EJL Wireless Research adds the Ericsson FDD/TDD LTE +GSM Unit to its DesigN Analysis Infrastructure; DNA-I series of teardown reports.
August 29, 2014
  Salem, NH (PRWEB) August 29, 2014           EJL Wireless Research is announcing a new report within its proprietary DNA-I series, an Ericsson FDD/TDD LTE+GSM DUS 31 01 multi-mode eNodeB.       "This is our first opportunity to look into the multi-mode digital baseband unit for Ericsson's RBS6000 platform. The DUS is the convergence of the first generation DUL unit for LTE and the DUG unit for GSM. Specifically, the DUS 31 01 versions offers mobile operators a 2x capacity increase as compared with the DUL 20 01 along with the ability to free up one DU slot within the RBS6000 cabinet" said founder and President, Earl Lum.

ROBERT HULL NAMED DIRECTOR OF CENTER FOR MATERIALS, DEVICES, AND INTEGRATED SYSTEMS AT RENSSELAER POLYTECHNIC INSTITUTE
August 29, 2014
The following information was released by Rensselaer Polytechnic Institute: By Michael Mullaney Advanced materials leader Robert Hull, the Henry Burlage Jr. Professor of Engineering and head of the Department of Materials Science and Engineering at Rensselaer Polytechnic Institute, has been named the first director of the Institute's new Center for Materials, Devices, and Integrated Systems (cMDIS). The appointment is effective October 1, 2014. As cMDIS director, Hull will help lead the Institute's strategic basic and applied research efforts across the broad spectrum of fields in engineering and the physical sciences, in leading-edge areas such as lightweight composite materials, nanostructured materials, sensors and sensor networks, power electronics, and wide bandgap semiconductors, as well as the integration of these technologies into complex systems. He will be responsible for driving the new frontiers of research and technology with emphasis on the development of large sponsored research proposals, grants, and programs, as well as forging partnerships with other universities, industry, and federal laboratories. Additionally, Hull will have overall responsibility for the Institute's Micro- and Nanofabrication Clean Room, the Nanoscale Materials Characterization Core, and other core research facilities.

Investigation of current-voltage characteristics and current conduction mechanisms in composites of polyvinyl alcohol and bismuth oxide; Report
August 01, 2014
  INTRODUCTION           Over the last decade, various types of metal-insulator-semiconductor (MIS) structures have been investigated vastly by many researchers [1-11]. Metal-polymer-semiconductor (MPS) structures are used as an alternative to conventional MIS structures. Main reason of using MPS structures is that having an organic interfacial layer between metal and semiconductor, rather than an inorganic one, leads to improvements in the electrical and dielectric properties of the structure [1-8]. Also, the fact that MPS structures exhibit characteristics that are similar to those of MIS structures allows us to obtain the electrical characteristics of MPS structures the same way we obtain those of MIS structures. Therefore, researchers used various polymers in their trial of reaching better structure characteristics. Among these polymers, polyvinyl alcohol (PVA) comes forward since it is a low cost material, which is easily processed even on flexible surfaces, it also diminishes the density of interface traps ([D.sub.it]) at the PVA/n-Si thanks to better compatibility with n-Si [1-7].           Normally, PVA is a poor electrical conductor, but conducted studies show it becomes conductive upon doing PVA with various metal reagents.


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