Process control for LEDs, compound semiconductors
The QC3 high-resolution x-ray diffraction system for LED and compound semiconductor manufacturing, based on Bede's QC200 and D1 systems (JV acquired Bede in April 2008), is configured to provide symmetric and asymmetric measurements for all common semiconductor wafers up to 300mm, such as GaAs, InP, Si, GaN (thick buffers); skew symmetric measurements allow additional capability (for GaN wafers in particular) to determine thickness, composition, relaxation and strain of multi-layer structures. Custom sample plates can be defined with locations for multiple wafers, along with large translation ranges, in order to load batches of wafers at once. The full measurement cycle can be automated for multiple wafers within a batch with results reported to the factory. Analysis is performed through RADS for either automated or offline analysis. Jordan Valley Semiconductors, Migdal Haemek, Israel; +972-4-6543666 x134, firstname.lastname@example.org, www.jvsemi.com.
Gold ball bonder
The Q2119A gold ball automatic wire bonder series is capable of fine-pitch, fine-wire (17-75µm-dia.) bonding to support various needs from prototyping to medium-volume production. Package conversions can be completed in as little as three minutes while accommodating a multitude of device configurations. Questar, Pleasanton, CA; 925-461-0100, email@example.com, www.questarproducts.com.
Software for complex SoC designs
The Encounter Digital Implementation System 9.1 integrates digital design, implementation, and verification to help developers find and implement optimal physical architecture of large-scale, complex systems-on-chip (SoCs) at leading-edge process nodes, including 32nm and 28nm. It combines automatic floorplan synthesis, data abstraction modeling, and new concurrent macro- and standard cell placement with embedded signoff analysis capabilities. New features include silicon-accurate extraction and design-for-manufacturing (DFM) analyses, a turbo QRC extraction capability, and turbo Litho Physical Analyzer for integrated DFM capabilities to enable automatic detection, prevention, and correction of potential litho hotspots. The system also has "significantly" increased memory capacity, accleration in single-CPU operations, and performance scalability. Cadence Design Systems, San Jose, CA; 408/944-7457, firstname.lastname@example.org, www.cadence.com.
Dopant gases for ICs
The Genii subatmospheric gas sources target ion implementation, where doping gases such as arsine, phosphine and boron trifluoride are introduced to the silicon substrate—dopants in subatmospheric pressure cylinders are seen as safer than higher-pressure alternatives. Linde claims on-site beta test at an IC maker shows a minimum of 20% reduction in ion implant source costs, with no impact on device performance. The sources come in two technologies: arsine, generated from an electrochemical generator housed in the cylinder; and enriched boron trifluoride or phosphine, through chemical complexing with ionic liquids contained in the cylinder. Linde North America, Murray Hill, NJ; 908-771-1512, email@example.com, www.lindeus.com.
Vacuum UV spectrometer
The Model 234/302 integrated UV spectrometer incorporates sensitive, cooled, scientific-grade CCD detectors to help measure vacuum UV spectral emission from He, Ar, Xe, N2, O2, etc. and many corrosive fluoride or chloride-based mixtures, in work ranging from plasma process mapping to fluorescence, luminescence, and VUV photoemission. The compact 200mm focal length spectrometer has adjustable slits, and operates at f/4.5 to simultaneously collect 100-190nm wavelength UV radiation and emission spectra in near real time with sub-nm spectral resolution. Various models of cooled, back-illuminated, and windowless sensors fit directly to the focal plane for direct detection of vacuum ultraviolet spectra. McPherson, Chelmsford, MA; 978/256-4512, firstname.lastname@example.org, www.mcphersoninc.com.
LED semiconductor inspection system
The Condor 5LED automated optical inspection system is designed to meet specific requirements of LED manufacturing: 3in. to 6in. wafers each with 100K-200K+ devices, made from translucent compounds such as GaAs, GaP, and InP. Camtek, Migdal-Haemek, Israel; +972-4-604-8100, www.camtek.co.il.
Thermal interface material
The EPM-2495 thermal interface material is a white, dispensable elastomer thermal interface silicone material that cures in place with a low bondline thickness (≤50µm) to reduce thermal resistance (its bulk thermal conductivity is 0.64 W/mK), and low outgassing characteristics. It is designed to adhere to IC substrates, baseplates, heat sinks, or areas where grooves or other configurations require a no- to limited-flow material. Its platinum cure system releases no byproducts and boasts low contamination, low ionic content, and low volatility. NuSil Technology, Carpinteria, CA; 805-684-8780, www.nusil.com.