SEMICON Taiwan 2005 Product Preview


Dispensing System

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Reportedly delivering an increased speed rating of more than 30% and twice the accuracy, the XyflexPro+ dispensing system features an advanced composite gantry design structure and linear drive system. The platform is available as a standalone or in-line system, and may easily be configured for various dispense applications within the electronics, automotive, and medical industries. Speedline Technologies, Franklin, Mass.,

Flip Chip Production Line

The 8800 FC Smart Line interlinks three machine modules: the 8800 FC Smart Line Flip Chip Bonder with integrated dispenser, a curing station with integrated electrical testing, and an optical inspection and reject-marking unit. A dual-head dispensing system, with needles for small dies and a shower head for large dies, offers fast, precise adhesive application, with two online cameras that monitor exact substrate adjustment and check for correct adhesive application. The dual-head flip chip bonding system ensures 8500-uph throughput with 25-µm at 3 sigma process accuracy. The adhesive cures with a multi-thermode bond head, guaranteeing quick pitch change between 9.5 and 14.25 mm. Fully automatic cover-tape handling prevents thermode contamination by adhesive. Datacon Technology AG, Radfeld, Austria,

Package Adhesives

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ABLELUX AA50T adhesive and ABLEBOND BF-4 backfill materials are designed for active alignment and assembly of transceiver packages. The combined use of AA50T and BF-4 provides an alignment that can withstand changes in temperature and humidity. ABLELUX AA50T adhesive is a UV/visible (470-nm blue) light cure material that combines quick fixturing and low shrinkage with low outgassing. ABLEBOND BF-4 thermal cure epoxy backfill material is matched to AA50T to provide additional structural strength and protection for aligned components. BF-4 is a single pack, premixed, and frozen epoxy that eliminates the cleanliness, mix reliability, and waste issues associated with the use of 2-part epoxy backfill materials. Ablestik, Rancho Dominguez, Calif.,

Wafer Technology

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These 300-mm strained silicon-on-insulator (sSOI) wafers are designed to enable high-speed, low-power IC applications, including those with high-performance logic cores. The electron mobility enhancement factor of up to 80% is built into the substrate, thus spreading the strain benefits to all regions of the IC and to all transistor geometries. Manufactured using the Smart Cut process, these advanced substrates can provide a high-yielding, easily integrated, next-generation substrate solution. The wafers exhibit stress of 1.5 GPa with homogeneity of ±7% across the entire wafer, equivalent to almost 1% strain. The strained silicon layer is 200-Å thick with ±3% uniformity, with surface roughness comparable to premium bulk silicon wafers. Wafer strain is maintained at up to 1,100ºC, resulting in a process window sufficient to accommodate thermal budgets needed for advanced CMOS integration. Soitec, Grenoble, France,

Wafer Bonder

The EVG520IS semi-automated wafer bonder is configurable for pilot-line or volume production for wafer-level and advanced packaging, 3D interconnects, and MEMS fabrication. Features include proprietary symmetric rapid heating and cooling chuck design, as well as a modular bond chamber design for 150-, 200-, and 300-mm wafers. The EVG520IS also accommodates demanding MEMS applications with high-vacuum, precisely controlled fine-vacuum, and pressurized device manufacturing. EV Group, Schärding, Austria,

Wafer Inspection System

3Di Series wafer inspection system is specifically designed to fulfill the most critical need of bumped device manufacturers; timely, accurate, and complete bump data. With patent-pending RCS technology, it offers an accurate solution for acquiring important 3D data, such as bump height, coplanarity, and other 3D defects. Additional features include 2D inspection and metrology, pre- and post-reflow, and other wafer-level packaging inspection, such as redistribution lines, thick films, vias, and intermediate interconnects. It inspects whole wafers from 75 to 300 mm, and sawn wafers up to 300 mm on film frames. August Technology Corp., Bloomington, Minn.,

CMOS Test System

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The S510 semiconductor reliability test system is a high-channel-count, turnkey solution for reliability testing and lifetime modeling of ULSI CMOS processes at the 65-nm node and beyond. It can also be used for production wafer-level reliability monitoring or as a lab parametric test system, and features scalable channel counts from 20 to 72 channels, an independent stress/measure channel for each structure, and simultaneous measurement across all channels. Keithley Instruments Inc., Cleveland, Ohio,

Dielectric Resin

Porous SiLK Y features an average pore diameter of <2 nm and a pore size distribution range of 1- to 3-nm. The resin also provides an optimized CTE profile to enhance device reliability and ease overall material integration, and incorporates a closed-pore structure with evenly distributed pores, yielding an ultra-low-k value (2.2), while maintaining mechanical toughness and compatibility with conventional BEOL unit operations, especially chemical mechanical planarization (CMP). The porous material also demonstrates a surface roughness comparable to non-porous materials, enabling the extension of timed-etch integration schemes. With the closed-pore morphology, the sheet resistance of the tantalum barriers can be significantly reduced. Dow Chemical Company, Midland, Mich.,

Silicon Material

Chemical vapor deposition (CVD) silicon carbide is a high-temperature material with a sublimation temperature of about 2700ºC. In an inert environment, this material can be used up to 2000°C. Above this temperature, there is an onset of phase change, from cubic beta phase to hexagonal alpha phase. It can be safely used up to 1500°C in air with good thermal- and mechanical-property retention. Bulk CVD process produces high-purity (>99.9995%) solid cubic beta SiC components for wafer processing and handling equipment. Free standing monolithic parts of solid CVD silicon carbide offer chemical resistance, thermal conductivity, stiffness, and thermal shock resistance, exhibit low particle generation, and are free of graphite and other contaminants. It is available in both low (<10 Ω-cm) and high (>1,000 Ω-cm) electrical resistivity grades. Rohm & Haas Electronic Materials, Philadelphia, Pa.,