Filter advance targets 193-nm processes


FRANKLIN, Mass.—Designed as the primary filtration system on the latest generation of 193-nanometer (nm) step-and-scan lithography tools—one-third the size of its predecessors—Extraction's ( ex2600 features the company's proprietary hybrid chemical filter media in a smaller footprint.

"A smaller footprint quickly translates to significant savings in cost of ownership, and gives users more installation flexibility," claims Extraction's Filtration Group Manager David Ruede. "These are important advantages as new fabs ramp production and older fabs install new generations of lithography tools."

Extraction's ex2600 filter system for 193-nm processes is designed to precisely characterize filtration performance across four locations, providing an advanced warning of filter breakthrough while complying with new measurement requirements found in 193-nm warranties.
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The mini-hybrid filter system, found in Extractions' E3000 field system, has been used in fabs to protect deep ultraviolet (DUV) photoresist exposure tool optics and resists from molecular acids, bases and condensable organics. The chemical filters are arranged in a serial/parallel configuration to provide enhanced protection against accidental spills of solvents and developer chemicals.

Incorporating the company's Interstack sample port design, the ex2600 is designed to precisely characterize filtration performance across four locations within the filter system, enabling users to comply with new measurement requirements found in 193-nm tool manufacturer warranties.

While designed especially for 193-nm processes, Extraction says the ex2600 is also suitable as a make-up air filter on other exposure tools, as well as for photoresist coat/develop track equipment.

In a related development, Extraction has unveiled its CSP Hybrid Filter that's designed to provide more comprehensive molecular contamination control in DUV processes.

The hybrid media will let users remove molecular bases as well as the acids and organic compounds that pose a risk to increasingly thinner photoresists.