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Solid State Technology
Variation in build-up substrate layer thicknesses and its impact on FCBGA BLR performance
Subtleties in thicknesses between the alternating Cu metal and dielectric layers within a build-up substrate can impact BLR performance.
Advanced lithography and electroplating approach to form high-aspect ratio copper pillars
It is possible to fabricate copper pillars more than 100?m in height, with aspect ratios up to 6:1, using advanced packaging stepper lithography in conjunction with electroplating.
Practical limits for metallization scaling in fabs
Beyond economic limits due to litho limitations, the inherent need for a physical barrier puts an electrical limit on the ability to scale.
Feed-forward overlay control in lithography processes using CGS
Feed-forward can be applied for controlling overlay error by using Coherent Gradient Sensing (CGS) data to reveal correlations between displacement variation and overlay variation.
Process Watch: The most expensive defect - Part 2
The December 2014 edition of Process Watch suggested that the most expensive defect is the one that goes undetected until the end of line. Indeed, undetected excursions typically result in the scrap of millions of dollars per year of defective semiconductor chips.
When front-end-of-line and back-end-of-line reliability meet
Due to the further scaling and increasing complexity of transistors, the boundaries between back-end-of-line and front-end-of-line reliability research are gradually fading. Imec’s team leaders Kristof Croes and Dimitri Linten give their vision on the future of reliability research.
Reports: TI, STMicro to add to semiconductor acquisitions spree
Texas Instruments (Maxim Integrated) and STMicro (Fairchild) may be considering large acquisitions.
Lam Research to acquire KLA-Tencor
Lam Research Corporation (LRCX) and KLA-Tencor Corporation (KLAC) announced that they have entered into a definitive agreement for Lam Research to acquire all outstanding KLA-Tencor shares in a cash and stock transaction.
GLOBALFOUNDRIES achieves 14nm finFET technology success for next-generation AMD products
GLOBALFOUNDRIES today announced it has demonstrated silicon success on the first AMD products using its most advanced 14nm FinFET process technology.
Light goes infinitely fast with new on-chip material
Researchers at the Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS) have designed the first on-chip metamaterial with a refractive index of zero.
Are you ready for Industry 4.0?
The semiconductor industry is sure to benefit by the “digitization” of manufacturing in that it’s an important component of the IoT explosion, along with smart homes, smart cities, smart health, etc. But is the semiconductor manufacturing industry � already one of the most advanced in the world � ready for the Industry 4.0 revolution?
GINTI’s via-last backside TSVs
One of the plenary presentations at this year’s IEEE 3DIC conference was “Advanced 2.5D/3D Hetero-Integration Technologies at GINTI, Tohoku University” by KW Lee, Koyanagi-san and co-workers, detailing the activities at the University and the prototyping spin-out.
Transistor-level challenges get squeaky wheel results
The squeaky wheel gets the grease, or so it seems in the semiconductor industry, as the high level of the design process seems to get the most attention. Meanwhile, the transistor level appears to have been largely forgotten.
Security by design
The advent of Internet-connected devices, the so-called Internet of Things (IoT), offers myriad opportunities and significant risks. It is our collective responsibility, as an industry, to secure the transport and storage of the data. Failing to properly secure the data risks turning the digital threat into a physical threat.