April 24, 2018 at 1:00 p.m. ET

Since 2006, many of new 3D NAND Flash cells have been proposed and commercialized on the market. Already, we have seen 3D NAND cell structure up to 64L/72L with single or multi-stack NAND string architecture. The memory density on Micron/Intel’s 64L 3D NAND 256 Gb/die reached 4.40 Gb/mm2 (256 Gb/die). In this session, we’ll overview 3D NAND Flash roadmap, products, cell design, structure, materials and process integration. The 3D NAND cell architecture from major NAND manufacturers including Samsung TCAT V-NAND, Toshiba/Western Digital BiCS, SK Hynix P-BiCS and Micron/Intel FG CuA will be reviewed and compared. Current and future technology challenges on 3D NAND will be discussed as well.

Thursday, May 17, 2018 at 1:00 p.m. ET

The increased use of artificial intelligence (AI) and machine learning (ML) techniques such as deep learning is creating a myriad of both challenges and opportunities for enhancements in manufacturing in terms of improved capacity, quality, and efficiency. The semiconductor industry poses somewhat unique challenges arising from its complex, high precision and highly dynamic production environment. One key way that these challenges are being addressed in semiconductor is by using an approach called “computational process control” or “CPC” in which AI and ML are combined with subject matter expertise to provide higher quality analytical solutions. This webcast will look at the AI/ML explosion, what it means to the semiconductor industry, and how CPC is being used to enhance the benefits of these analytical techniques.

Date and time TBD

This webcast will examine the state-of-the-art in conductors and dielectrics, -- including contacts and Metal1 through global level -- pre-metal dielectrics, associated planarization, necessary etch, strip and cleans, embedded passives, global and intermediate TSVs for 3D, as well as reliability, system, and performance issues.