As part of the technical program at the annual IEEE International Electron Devices Meeting (IEDM), scheduled for December 9 – 11, 2013 at the Washington Hilton Hotel, a special focus session has been planned to highlight advanced processing and platforms for semiconductor manufacturing technology, including ‘more-than-Moore’ applications.
The technical session, scheduled for Tuesday, December 10 from 9am – 12pm, will feature presentations on many of today’s hot topics: memory, LEDs, silicon photonics, interposers, SOI finFETS and 450mm.
Memory industry transition from planar to 3D scaling and the introduction of emerging memory devices into manufacturing over the next decade will drive several unique challenges. The inflection point faced by the semiconductor memory industry is a new paradigm where advancements in materials science, equipment technology, and control methodologies are critical for scaling cadence. This will be the focus of “Challenges in 3D Memory Manufacturing and Process Integration,” an invited paper given by N. Chandrasekaran, Micron Technology
The output power at high temperature required for LEDs applied in solid-state lighting can be obtained by reducing threading dislocation density (TDD) on silicon substrates using a new technology, SiN multiple-modulation interlayers, to realize highly efficient blue LEDs grown on high-crystalline-quality GaN templates on 8-inch silicon wafers. This will be presented in “LED Manufacturing Issues Concerning Gallium Nitride-on-Silicon (GaN-on-Si) Technology and Wafer Scale up Challenges,” an invited paper given by S. Nunoue, et.al., Toshiba Corporation
Recently, silicon photonics has generated a renewed interest in integrated optical communications. A paper titled “A Multi-Wavelength 3D-Compatible Silicon Photonics Platform on 300mm SOI Wafers for 25Gb/s Applications,” presented by F. Boeuf, et. al., STMicroelectronics will describe the main process features and device results for a 300mm silicon photonics platform designed for 25Gb/s and above applications, at the three typical communication wavelengths that are compatible with 3D integration.
A paper from TSMC will present the details of the first fabrication of a 300mm, 50μm ultra-thin glass interposer – a promising technology for future high frequency mobile RF applications. The merits of on-glass inductors and transmission lines are compared to their on-silicon counterparts in Q-factor, power dissipation, and power/signal integrity. “300mm Size Ultra-Thin Glass Interposer Technology and High-Q Embedded Helical Inductor for Mobile Applications,” will be presented by W.-C. Lai, et. al., TSMC.
The first rigorous experimental study of effective current (Ieff) variability in high-volume manufacturable 14nm SOI FINFETs, will be presented by A. Paul of GLOBALFOUNDRIES. The study identifies, threshold voltage (Vtlin), external resistance (Rext), and channel transconductance (gm) as three independent sources of variation. The variability in gm, Vtlin (AVT=1.4(n)/0.7(p) mV-μm), and Ieff exhibit a linear Pelgrom fit (indicating local variations), along with non-zero intercept (which suggests global variations at the wafer level). Both n- and p-FINFETs show the above-mentioned trends. The paper is titled “Comprehensive Study of Effective Current Variability and MOSFET Parameter Correlations in 14nm Multi-Fin SOI FINFETs.”
The 450mm transition represents an opportunity to reduce die cost and stimulate another wave of innovations and greener manufacturing. Key challenges ahead, including tool productivity, uniformity, precision, cost-of-ownership reduction, and green concept design-in tool and manufacturing systems, are presented. “Opportunities and Challenges of the 450mm Transition,” is an invited presentation by J. Lin and P. Lin, TSMC.