Ion implantation is a materials engineering process by which ions of a material are accelerated in an electrical field and directed into the wafer, typically to form the source and drain regions of the transistor.

Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy, and a target chamber, where the ions impinge on a target, which is the material to be implanted. Thus ion implantation is a special case of particle radiation. Each ion is typically a single atom or molecule, and thus the actual amount of material implanted in the target is the integral over time of the ion current. This amount is called the dose. The currents supplied by implanters are typically small (microamperes), and thus the dose which can be implanted in a reasonable amount of time is small. Therefore, ion implantation finds application in cases where the amount of chemical change required is small.

Typical ion energies are in the range of 10 to 500 keV (1,600 to 80,000 aJ). Energies in the range 1 to 10 keV (160 to 1,600 aJ) can be used, but result in a penetration of only a few nanometers or less. Energies lower than this result in very little damage to the target, and fall under the designation ion beam deposition. Higher energies can also be used: accelerators capable of 5 MeV are common. However, there is often great structural damage to the target, and because the depth distribution is broad, the net composition change at any point in the target will be small.

The energy of the ions, as well as the ion species and the composition of the target determine the depth of penetration of the ions in the solid: A monoenergetic ion beam will generally have a broad depth distribution. The average penetration depth is called the range of the ions. Under typical circumstances ion ranges will be between 10 nanometers and 1 micrometer.

Accelerator systems for ion implantation are generally classified into medium current (ion beam currents between 10 μA and ~2 mA), high current (ion beam currents up to ~30 mA), high energy (ion energies above 200 keV and up to 10 MeV), and very high dose (efficient implant of dose greater than 1016 ions/cm2).

Dopant ions such as boron, phosphorus or arsenic are generally created from a gas source, so that the purity of the source can be very high.

One prominent method for preparing silicon on insulator (SOI) substrates from conventional silicon substrates is the SIMOX (separation by implantation of oxygen) process, wherein a buried high dose oxygen implant is converted to silicon oxide by a high temperature annealing process.

Suppliers of ion implanters include Applied Materials, Axcelis and High Energy Corp.

Additional Reading

Leveraging ion implant process characteristics to facilitate 22nm devices

Threshold voltage tuning for 10nm and beyond CMOS integration

How to verify incident implant angles on medium current implants


Kinetics acquires Mega Fluid Systems

03/30/2018  According to the details of the agreement, Mega Fluid Systems will operate as a Kinetics company, but will maintain its brand and product line.

Understanding ALD, MLD and SAMs as they enter the fab

03/01/2018  As the world of advanced manufacturing enters the sub-nanometer scale era, it is clear that ALD, MLD and SAM represent viable options for delivering the required few-atoms-thick layers required with uniformity, conformality, and purity.

US demand for semiconductor machinery to total $7.4B in 2021

02/16/2018  Growth in demand for wafer processing equipment will account for the majority of value growth.

CSTIC and SEMICON CHINA 2018: Brooks Instrument to present new mass flow controller with self-diagnostics​

02/09/2018  Brooks Instrument will showcase its newly enhanced GF125 mass flow controller (MFC) with high-speed EtherCAT connectivity and embedded self-diagnostics at the China Semiconductor Technology International Conference (CSTIC) in conjunction with SEMICON China 2018 in Shanghai.

Leak check semiconductor process chambers quickly and reliably

02/08/2018  INFICON,a manufacturer of leak test equipment, introduced the UL3000 Fab leak detector for semiconductor manufacturing maintenance teams to easily check the tightness of vacuum chambers for wafer production.

Boston Semi Equipment develops custom automation modules for strip handling equipment

01/31/2018  Boston Semi Equipment (BSE) today announced that it has started shipping units of its new strip load/unload module to a top 10 semiconductor manufacturer.

Turbulent times ahead for trade

01/25/2018  International trade is one of the best tools to spur growth and create high-skill and high-paying jobs. Over 40 million American jobs rely on trade, and this is particularly true in the semiconductor supply chain. Over the past three decades, the semiconductor industry has averaged nearly double-digit growth rates in revenue and, by 2030, the semiconductor supply chain is forecast to reach $1 trillion.

NAURA Akrion Inc. acquired Akrion’s surface preparation business

01/18/2018  Beijing NAURA Microelectronics Equipment Co.,Ltd. and Akrion Systems LLC today jointly announced that the previously announced acquisition by NAURA has been completed.

$55.9B semiconductor equipment forecast: New record with Korea at top

12/12/2017  Today, SEMI, the global industry association representing the electronics manufacturing supply chain, released its Year-end Forecast at the annual SEMICON Japan exposition.

CVD completes purchase of 180,000 sq. ft. facility

12/08/2017  This new facility will be the primary manufacturing center for the Company’s wholly owned subsidiary, CVD Materials Corporation.

Semiconductor industry continues upward trend toward record year

11/30/2017  The semiconductor industry continued its upward trend in the third quarter of 2017, notching 12 percent sequential growth with strength across all application markets, according to IHS Markit.

OEM Group announces post-dice clean solutions for plasma and laser dicing methods

09/28/2017  OEM Group announced today a post-dice clean solution on the proven Cintillio Batch Spray platform following plasma and laser dicing methods.