Materials experts from across the supply chain gathered at the 2012 Strategic Materials Conference 2012 in San Jose in October, discussing key materials needs for micromanufacturing outside the CMOS mainstream: OLEDs and GaN-on-silicon power semiconductors, graphene, CNTs, and self-assembling polymers.
At SEMICON Europa, European government representatives, consortia, and suppliers discussed programs to support and participate in the 450mm wafer-size transition -- including a comprehensive presentation from ASML about its roadmap for 450mm EUV platforms.
In news from Semicon Japan, a Nikon spokesperson said that the company plans to ship high-volume manufacturing (HVM) lithography tools in 2017, and Intel officially announced a 450mm Japan Metrology Center.
While various industry segments appear to be tapping the brakes, others are revving their engines, observes SEMI's Christian Gregor Dieseldorff -- and a 2012 stall could pave the way for a record-breaking 2013.
In this SEMI News and Views blog, Karen Savala covers EUV lithography, 450mm wafers, and 3D IC developments, based on her recent presentation at SEMICON West, “Supply Chain Readiness in an Era of Accelerated Change.”
Learn about the changes in semiconductor manufacturing as well as related markets -- photovoltaics, displays, LEDs, etc -- at the 2012 Strategic Materials Conference (SMC), to be held on October 23-24 in San Jose, CA. SEMI reports.
Even though semiconductor manufacturers in Japan are consolidating and transitioning to a "fab-lite" strategy, the region still represents a large installed fab capacity and a major market for equipment and materials suppliers.
During sessions at this month's SEMICON Taiwan, execs from TEL, Lam Research, Applied Materials and KLA-Tencor revealed the latest developments in 450mm technology.
In advance of the 2013 SEMICON West TechXPOTs on lithography and nonplanar transistors beyond 20nm, SEMI asked some of the speakers and industry experts to comment on the challenges they wanted to highlight. Many of the inputs focused on the need for precision in the processes used to form transistors, as well as how EDA can contribute to mitigating variability.